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A platform for research: civil engineering, architecture and urbanism
Silicon carbide target material and preparation method thereof
The invention provides a silicon carbide target material and a preparation method thereof, and the preparation method comprises the following steps: filling a mold with silicon carbide powder, placing the filled mold in hot pressing sintering equipment, carrying out primary pressurization treatment, and vacuumizing; first-stage heating is carried out, second-stage heating is carried out after heat preservation is finished, second-stage pressurization treatment is carried out after second-stage heating is finished, and the second-stage pressurization treatment is divided into two stages of pressurization processes; and after the second-stage heating and heat preservation are finished, sequentially carrying out third-stage heating, after heat preservation is finished, carrying out fourth-stage heating, after heat preservation and pressure preservation are finished, carrying out cooling and pressure reduction, and carrying out machining to obtain the silicon carbide target material. According to the method, the fine-grained silicon carbide powder is used as the raw material, and the heating and pressurizing processes in the hot-pressing sintering process are controlled by utilizing the characteristics of the raw material, so that the hot-pressed and sintered target material product is relatively high in density, purity and hardness, uniform in microstructure and free of pores, and the requirements of magnetron sputtering on the characteristics of the target material can be met; the method is simple and convenient to operate, high in target qualification rate and low in cost.
本发明提供了一种碳化硅靶材及其制备方法，所述制备方法包括：将碳化硅粉末装填到模具中，再将装填后的模具置于热压烧结设备中，经一次加压处理后抽真空；然后进行一段升温，保温结束后进行二段升温，二段升温结束后进行二次加压处理，二次加压处理分为两段加压过程；所述二段升温及保温结束后依次进行三段升温，保温结束后进行四段升温，保温保压结束后降温降压，再经机加工，得到碳化硅靶材。本发明以细粒度碳化硅粉末为原料，利用原料特性，控制热压烧结过程中的加热加压进程，使得热压烧结后的靶材产品致密度、纯度及硬度均较高，微观结构均匀且无气孔，能够满足磁控溅射对靶材特性的要求；所述方法操作简便，靶材合格率高，成本较低。
Silicon carbide target material and preparation method thereof
The invention provides a silicon carbide target material and a preparation method thereof, and the preparation method comprises the following steps: filling a mold with silicon carbide powder, placing the filled mold in hot pressing sintering equipment, carrying out primary pressurization treatment, and vacuumizing; first-stage heating is carried out, second-stage heating is carried out after heat preservation is finished, second-stage pressurization treatment is carried out after second-stage heating is finished, and the second-stage pressurization treatment is divided into two stages of pressurization processes; and after the second-stage heating and heat preservation are finished, sequentially carrying out third-stage heating, after heat preservation is finished, carrying out fourth-stage heating, after heat preservation and pressure preservation are finished, carrying out cooling and pressure reduction, and carrying out machining to obtain the silicon carbide target material. According to the method, the fine-grained silicon carbide powder is used as the raw material, and the heating and pressurizing processes in the hot-pressing sintering process are controlled by utilizing the characteristics of the raw material, so that the hot-pressed and sintered target material product is relatively high in density, purity and hardness, uniform in microstructure and free of pores, and the requirements of magnetron sputtering on the characteristics of the target material can be met; the method is simple and convenient to operate, high in target qualification rate and low in cost.
本发明提供了一种碳化硅靶材及其制备方法，所述制备方法包括：将碳化硅粉末装填到模具中，再将装填后的模具置于热压烧结设备中，经一次加压处理后抽真空；然后进行一段升温，保温结束后进行二段升温，二段升温结束后进行二次加压处理，二次加压处理分为两段加压过程；所述二段升温及保温结束后依次进行三段升温，保温结束后进行四段升温，保温保压结束后降温降压，再经机加工，得到碳化硅靶材。本发明以细粒度碳化硅粉末为原料，利用原料特性，控制热压烧结过程中的加热加压进程，使得热压烧结后的靶材产品致密度、纯度及硬度均较高，微观结构均匀且无气孔，能够满足磁控溅射对靶材特性的要求；所述方法操作简便，靶材合格率高，成本较低。
Silicon carbide target material and preparation method thereof
一种碳化硅靶材及其制备方法
YAO LIJUN (author) / PAN JIE (author) / WANG XUEZE (author) / YANG HUIZHEN (author)
2023-11-10
Patent
Electronic Resource
Chinese
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