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Indium titanium zinc oxide sputtering target material, film thereof and preparation method thereof
An indium titanium zinc oxide sputtering target comprising a sintered body of In, Ti, Zn, and O. The sintered body contains an In2O3 crystal phase and an In2TiO5 crystal phase; wherein, based on 100 at.% of the total atomic content of In, Ti and Zn, the atomic content of In is 63 at.% or more, the atomic content of Ti is 10 at.% or more and 30 at.% or less, and the atomic content of Zn is 2 at.% or more. The invention also provides a thin film sputtered by the indium titanium zinc oxide sputtering target material, and a preparation method of the sputtering target material. The sintered body contains the In2O3 crystal phase and the In2TiO5 crystal phase, so that the light refractive index of the indium titanium zinc oxide film sputtered by the sputtering target material can be improved on the premise of meeting the requirements of the industry on the sputtering rate and the time cost, and the requirements of the photoelectric related industry on the light refractive index of the film are met.
一种氧化铟钛锌溅镀靶材，其含有In、Ti、Zn及O的烧结体。该烧结体含有In2O3结晶相与In2TiO5结晶相；其中，基于In、Ti及Zn的原子总含量为100at.％计，In的原子含量是63at.％以上，Ti的原子含量是10at.％以上且30at.％以下，Zn的原子含量是2at.％以上。本发明也提供一种前述氧化铟钛锌溅镀靶材所溅镀而得的薄膜，及前述溅镀靶材的制法。本发明基于该烧结体中含有该In2O3结晶相与该In2TiO5结晶相，因而能在符合产业对溅镀速率与时间成本的要求上使得自前述溅镀靶材所溅镀而得的氧化铟钛锌薄膜的光折射率提升，以符合光电相关产业对薄膜在光折射率上的要求。
Indium titanium zinc oxide sputtering target material, film thereof and preparation method thereof
An indium titanium zinc oxide sputtering target comprising a sintered body of In, Ti, Zn, and O. The sintered body contains an In2O3 crystal phase and an In2TiO5 crystal phase; wherein, based on 100 at.% of the total atomic content of In, Ti and Zn, the atomic content of In is 63 at.% or more, the atomic content of Ti is 10 at.% or more and 30 at.% or less, and the atomic content of Zn is 2 at.% or more. The invention also provides a thin film sputtered by the indium titanium zinc oxide sputtering target material, and a preparation method of the sputtering target material. The sintered body contains the In2O3 crystal phase and the In2TiO5 crystal phase, so that the light refractive index of the indium titanium zinc oxide film sputtered by the sputtering target material can be improved on the premise of meeting the requirements of the industry on the sputtering rate and the time cost, and the requirements of the photoelectric related industry on the light refractive index of the film are met.
一种氧化铟钛锌溅镀靶材，其含有In、Ti、Zn及O的烧结体。该烧结体含有In2O3结晶相与In2TiO5结晶相；其中，基于In、Ti及Zn的原子总含量为100at.％计，In的原子含量是63at.％以上，Ti的原子含量是10at.％以上且30at.％以下，Zn的原子含量是2at.％以上。本发明也提供一种前述氧化铟钛锌溅镀靶材所溅镀而得的薄膜，及前述溅镀靶材的制法。本发明基于该烧结体中含有该In2O3结晶相与该In2TiO5结晶相，因而能在符合产业对溅镀速率与时间成本的要求上使得自前述溅镀靶材所溅镀而得的氧化铟钛锌薄膜的光折射率提升，以符合光电相关产业对薄膜在光折射率上的要求。
Indium titanium zinc oxide sputtering target material, film thereof and preparation method thereof
氧化铟钛锌溅镀靶材、其薄膜及其制法
HUANG SHENGHAN (author) / CHEN SHENGYU (author) / XIE CHENGYAN (author) / HONG YINGZHAN (author) / JIAN YUCANG (author)
2023-12-08
Patent
Electronic Resource
Chinese
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