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INDIUM TIN ZINC OXIDE SPUTTERING TARGET MATERIAL AND INDIUM TIN ZINC OXIDE CONDUCTIVE FILM FORMED THEREFROM
To provide an indium tin zinc oxide sputtering target material that can form a conductive film having flexibility.SOLUTION: An indium tin zinc oxide sputtering target material is a sintered body composed of In, Zn, Sn and O, wherein the sintered body is formed from In2O3 crystal phase and Zn3In2O6 crystal phase. With the total content of In, Zn, Sn as 100 at%, the content of In is 77 at%-90 at%. The ratio of the Zn content to the In content is more than 0.05.SELECTED DRAWING: Figure 7
【課題】可撓性を有する導電膜を形成できる酸化インジウム亜鉛スズスパッタリングターゲット材を提供する。【解決手段】酸化インジウム亜鉛スズスパッタリングターゲット材は、Ｉｎ、Ｚｎ、Ｓｎ及びＯからなる焼結体であって、前記焼結体は、Ｉｎ２Ｏ３結晶相とＺｎ３Ｉｎ２Ｏ６結晶相とから形成され、Ｉｎ、Ｚｎ、Ｓｎの含有量の総量１００ａｔ％に対して、Ｉｎの含有量は、７７ａｔ％～９０ａｔ％の範囲内にあり、且つＺｎ含有量のＩｎ含有量に対する比は、０．０５を超える。【選択図】図７
INDIUM TIN ZINC OXIDE SPUTTERING TARGET MATERIAL AND INDIUM TIN ZINC OXIDE CONDUCTIVE FILM FORMED THEREFROM
To provide an indium tin zinc oxide sputtering target material that can form a conductive film having flexibility.SOLUTION: An indium tin zinc oxide sputtering target material is a sintered body composed of In, Zn, Sn and O, wherein the sintered body is formed from In2O3 crystal phase and Zn3In2O6 crystal phase. With the total content of In, Zn, Sn as 100 at%, the content of In is 77 at%-90 at%. The ratio of the Zn content to the In content is more than 0.05.SELECTED DRAWING: Figure 7
【課題】可撓性を有する導電膜を形成できる酸化インジウム亜鉛スズスパッタリングターゲット材を提供する。【解決手段】酸化インジウム亜鉛スズスパッタリングターゲット材は、Ｉｎ、Ｚｎ、Ｓｎ及びＯからなる焼結体であって、前記焼結体は、Ｉｎ２Ｏ３結晶相とＺｎ３Ｉｎ２Ｏ６結晶相とから形成され、Ｉｎ、Ｚｎ、Ｓｎの含有量の総量１００ａｔ％に対して、Ｉｎの含有量は、７７ａｔ％～９０ａｔ％の範囲内にあり、且つＺｎ含有量のＩｎ含有量に対する比は、０．０５を超える。【選択図】図７
INDIUM TIN ZINC OXIDE SPUTTERING TARGET MATERIAL AND INDIUM TIN ZINC OXIDE CONDUCTIVE FILM FORMED THEREFROM
酸化インジウム亜鉛スズスパッタリングターゲット材及びそれにより形成される酸化インジウム亜鉛スズ導電膜
CHEN SHENG YU (author) / LIU YANMING (author) / HSIEH CHENG YEN (author) / CHIEN YU TSANG (author) / HUANG SHENG HAN (author)
2022-06-09
Patent
Electronic Resource
Japanese
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