A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
Method for manufacturing silicon nitride substrate and silicon nitride substrate manufactured thereby
Provided is a method for manufacturing a silicon nitride substrate. A method for manufacturing a silicon nitride substrate according to one embodiment of the present invention comprises: a step for preparing a ceramic composition comprising a metal silicon powder and a crystal phase control powder comprising a rare earth element-containing compound and a magnesium-containing compound; a step for producing a sheet-like molded body using a slurry prepared by mixing the ceramic composition with a solvent and an organic binder; and a heat treatment step including a nitriding interval in which heat treatment is performed at a first temperature in the range of 1300 DEG C to 1500 DEG C while applying nitrogen gas at a predetermined pressure to the molded body, and a sintering interval in which heat treatment is performed at a second temperature in the range of 1700 DEG C to 1900 DEG C. Therefore, compared with the prior art, the manufacturing time and man-hour can be reduced, and the method is suitable for large-scale production. In addition, by minimizing or preventing the phenomena of silicon melting and elution in the nitriding process, the realized silicon nitride substrate has excellent mechanical strength. In addition, sintering is completed after entering a sintering interval while rapid transformation to a beta phase is inhibited, so that transformation to the beta phase, growth promotion of the beta phase and uniform growth can be realized, and the heat conductivity coefficient is improved. In addition, no matter how the position of the substrate is, the heat conductivity coefficient and the mechanical strength are uniform, so that the substrate with higher quality can be realized.
提供一种氮化硅基板的制造方法。根据本发明的一实施例的氮化硅基板的制造方法包括：制备包括金属硅粉末、包含含稀土元素化合物和含镁化合物的晶相控制粉末的陶瓷组合物的步骤；使用通过将上述陶瓷组合物与溶剂和有机粘合剂混合而制备的浆料制造片状成型体的步骤；及包括在对于上述成型体以预定压力施加氮气的同时在1300℃至1500℃范围内的第一温度下进行热处理的氮化区间和在1700℃至1900℃范围内的第二温度下进行热处理的烧结区间的热处理步骤。据此，与以往相比，可以减少制造时间和工时，因此适合于大规模生产。此外，通过最小化或防止在氮化过程中硅熔化、溶出的现象，所实现的氮化硅基板具有优异的机械强度。此外，在抑制向β相的快速转变的同时进入烧结区间后完成烧结，从而可以实现向β相的转变、β相的生长促进及均匀生长，因此具有更改善的导热系数。此外，无论基板的位置如何，导热系数和机械强度都均匀，因此可以实现更高质量的基板。
Method for manufacturing silicon nitride substrate and silicon nitride substrate manufactured thereby
Provided is a method for manufacturing a silicon nitride substrate. A method for manufacturing a silicon nitride substrate according to one embodiment of the present invention comprises: a step for preparing a ceramic composition comprising a metal silicon powder and a crystal phase control powder comprising a rare earth element-containing compound and a magnesium-containing compound; a step for producing a sheet-like molded body using a slurry prepared by mixing the ceramic composition with a solvent and an organic binder; and a heat treatment step including a nitriding interval in which heat treatment is performed at a first temperature in the range of 1300 DEG C to 1500 DEG C while applying nitrogen gas at a predetermined pressure to the molded body, and a sintering interval in which heat treatment is performed at a second temperature in the range of 1700 DEG C to 1900 DEG C. Therefore, compared with the prior art, the manufacturing time and man-hour can be reduced, and the method is suitable for large-scale production. In addition, by minimizing or preventing the phenomena of silicon melting and elution in the nitriding process, the realized silicon nitride substrate has excellent mechanical strength. In addition, sintering is completed after entering a sintering interval while rapid transformation to a beta phase is inhibited, so that transformation to the beta phase, growth promotion of the beta phase and uniform growth can be realized, and the heat conductivity coefficient is improved. In addition, no matter how the position of the substrate is, the heat conductivity coefficient and the mechanical strength are uniform, so that the substrate with higher quality can be realized.
提供一种氮化硅基板的制造方法。根据本发明的一实施例的氮化硅基板的制造方法包括：制备包括金属硅粉末、包含含稀土元素化合物和含镁化合物的晶相控制粉末的陶瓷组合物的步骤；使用通过将上述陶瓷组合物与溶剂和有机粘合剂混合而制备的浆料制造片状成型体的步骤；及包括在对于上述成型体以预定压力施加氮气的同时在1300℃至1500℃范围内的第一温度下进行热处理的氮化区间和在1700℃至1900℃范围内的第二温度下进行热处理的烧结区间的热处理步骤。据此，与以往相比，可以减少制造时间和工时，因此适合于大规模生产。此外，通过最小化或防止在氮化过程中硅熔化、溶出的现象，所实现的氮化硅基板具有优异的机械强度。此外，在抑制向β相的快速转变的同时进入烧结区间后完成烧结，从而可以实现向β相的转变、β相的生长促进及均匀生长，因此具有更改善的导热系数。此外，无论基板的位置如何，导热系数和机械强度都均匀，因此可以实现更高质量的基板。
Method for manufacturing silicon nitride substrate and silicon nitride substrate manufactured thereby
氮化硅基板的制造方法及由此制造的氮化硅基板
PARK KYU-HWAN (author) / JEONG HUN (author)
2023-12-15
Patent
Electronic Resource
Chinese
IPC:
C04B
Kalk
,
LIME
| European Patent Office | 2024
| European Patent Office | 2022
| European Patent Office | 2024
| European Patent Office | 2024
| European Patent Office | 2024