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COMPOSITION FOR MANUFACTURING SILICON NITRIDE SUBSTRATE AND SILICON NITRIDE SUBSTRATE MANUFACTURED THEREBY
Provided is a composition for manufacturing a silicon nitride substrate. According to an embodiment of the present invention, the composition for manufacturing a silicon nitride substrate comprises a mixed powder including a silicon-based powder and a nitride-based sintering aid, wherein the mixed powder has a particle distribution coefficient of variation (CV value) of 65-86%. According to the present invention, the sintered body is compact and has excellent thermal conductivity, and uniform physical properties can be exhibited whilst also having excellent mechanical strength such as bending strength or abrasion resistance.
L'invention concerne une composition de fabrication d'un substrat en nitrure de silicium. Selon un mode de réalisation de la présente invention, la composition de fabrication d'un substrat en nitrure de silicium comprend une poudre mélangée comprenant une poudre à base de silicium et un auxiliaire de frittage à base de nitrure, la poudre mélangée ayant un coefficient de variation de distribution de particules (valeur CV) de 65 à 86 %. Selon la présente invention, le corps fritté est compact et présente une excellente conductivité thermique, et des propriétés physiques uniformes peuvent être affichées tout en ayant également une excellente résistance mécanique telle qu'une résistance à la flexion ou une résistance à l'abrasion.
질화규소 기판 제조용 조성물이 제공된다. 본 발명의 일 실시예에 따른 질화규소 기판 제조용 조성물은 규소계 분말 및 질화물계 소결조제를 포함하는 혼합분말을 포함하고, 상기 혼합분말은 입자분포 변동계수(CV 값)가 65 ~ 86%이도록 구현된다. 이에 의하면, 소결체의 치밀성 및 열전도율이 우수하고, 굽힘강도나 내마모성 등의 기계적 강도가 우수한 동시에, 균일한 물성을 발현할 수 있는 효과가 있다.
COMPOSITION FOR MANUFACTURING SILICON NITRIDE SUBSTRATE AND SILICON NITRIDE SUBSTRATE MANUFACTURED THEREBY
Provided is a composition for manufacturing a silicon nitride substrate. According to an embodiment of the present invention, the composition for manufacturing a silicon nitride substrate comprises a mixed powder including a silicon-based powder and a nitride-based sintering aid, wherein the mixed powder has a particle distribution coefficient of variation (CV value) of 65-86%. According to the present invention, the sintered body is compact and has excellent thermal conductivity, and uniform physical properties can be exhibited whilst also having excellent mechanical strength such as bending strength or abrasion resistance.
L'invention concerne une composition de fabrication d'un substrat en nitrure de silicium. Selon un mode de réalisation de la présente invention, la composition de fabrication d'un substrat en nitrure de silicium comprend une poudre mélangée comprenant une poudre à base de silicium et un auxiliaire de frittage à base de nitrure, la poudre mélangée ayant un coefficient de variation de distribution de particules (valeur CV) de 65 à 86 %. Selon la présente invention, le corps fritté est compact et présente une excellente conductivité thermique, et des propriétés physiques uniformes peuvent être affichées tout en ayant également une excellente résistance mécanique telle qu'une résistance à la flexion ou une résistance à l'abrasion.
질화규소 기판 제조용 조성물이 제공된다. 본 발명의 일 실시예에 따른 질화규소 기판 제조용 조성물은 규소계 분말 및 질화물계 소결조제를 포함하는 혼합분말을 포함하고, 상기 혼합분말은 입자분포 변동계수(CV 값)가 65 ~ 86%이도록 구현된다. 이에 의하면, 소결체의 치밀성 및 열전도율이 우수하고, 굽힘강도나 내마모성 등의 기계적 강도가 우수한 동시에, 균일한 물성을 발현할 수 있는 효과가 있다.
COMPOSITION FOR MANUFACTURING SILICON NITRIDE SUBSTRATE AND SILICON NITRIDE SUBSTRATE MANUFACTURED THEREBY
COMPOSITION DE FABRICATION D'UN SUBSTRAT EN NITRURE DE SILICIUM ET SUBSTRAT EN NITRURE DE SILICIUM AINSI FABRIQUÉ
질화규소 기판 제조용 조성물 및 이를 통해 제조된 질화규소 기판
AN YOUNG-JUN (author) / LEE GIL-SUN (author) / SHIN JUNG-KYUN (author) / CHEONG HUN (author) / OH CHANG-WOO (author) / YOON GUG HO (author)
2024-08-29
Patent
Electronic Resource
Korean
IPC:
C04B
Kalk
,
LIME
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