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METHOD FOR MANUFACTURING SILICON NITRIDE SUBSTRATE AND SILICON NITRIDE SUBSTRATE MANUFACTURED THEREBY
Provided is a method for manufacturing a silicon nitride substrate. A method for manufacturing a silicon nitride substrate according to an exemplary embodiment of the present invention comprises the steps of: preparing a ceramic composition containing a metal silicon powder and a crystalline phase control powder containing a rare earth element-containing compound and a magnesium-containing compound; manufacturing a sheet-shaped molded body of a slurry prepared by mixing a solvent and an organic binder with the ceramic composition; and performing heat treatment including a nitrification section where heat treatment is performed at a first temperature in the range of 1300-1500°C together with the application of nitrogen gas to the molded body at a predetermined pressure and a sintering section where heat treatment is performed at a second temperature in the range of 1700-1900°C. Therefore, the present invention, compared with the conventional art, can reduce the manufacturing time and manpower and thus is suitable for mass production. Additionally, the implemented silicon nitride substrate has excellent mechanical strength since the melting and elution of silicon can be minimized or prevented during nitrification. Furthermore, sintering is completed after entering the sintering section while the rapid transition to a beta phase is suppressed, and thus the transition to the beta phase, the acceleration of beta phase growth, and uniform growth can be attained, leading to more improved thermal conductivity. Furthermore, thermal conductivity and mechanical strength are uniform regardless of the site on the substrate, so that a higher-quality substrate can be attained.
METHOD FOR MANUFACTURING SILICON NITRIDE SUBSTRATE AND SILICON NITRIDE SUBSTRATE MANUFACTURED THEREBY
Provided is a method for manufacturing a silicon nitride substrate. A method for manufacturing a silicon nitride substrate according to an exemplary embodiment of the present invention comprises the steps of: preparing a ceramic composition containing a metal silicon powder and a crystalline phase control powder containing a rare earth element-containing compound and a magnesium-containing compound; manufacturing a sheet-shaped molded body of a slurry prepared by mixing a solvent and an organic binder with the ceramic composition; and performing heat treatment including a nitrification section where heat treatment is performed at a first temperature in the range of 1300-1500°C together with the application of nitrogen gas to the molded body at a predetermined pressure and a sintering section where heat treatment is performed at a second temperature in the range of 1700-1900°C. Therefore, the present invention, compared with the conventional art, can reduce the manufacturing time and manpower and thus is suitable for mass production. Additionally, the implemented silicon nitride substrate has excellent mechanical strength since the melting and elution of silicon can be minimized or prevented during nitrification. Furthermore, sintering is completed after entering the sintering section while the rapid transition to a beta phase is suppressed, and thus the transition to the beta phase, the acceleration of beta phase growth, and uniform growth can be attained, leading to more improved thermal conductivity. Furthermore, thermal conductivity and mechanical strength are uniform regardless of the site on the substrate, so that a higher-quality substrate can be attained.
METHOD FOR MANUFACTURING SILICON NITRIDE SUBSTRATE AND SILICON NITRIDE SUBSTRATE MANUFACTURED THEREBY
VERFAHREN ZUR HERSTELLUNG EINES SILICIUMNITRIDSUBSTRATS UND DADURCH HERGESTELLTES SILICIUMNITRIDSUBSTRAT
PROCÉDÉ POUR LA FABRICATION D'UN SUBSTRAT EN NITRURE DE SILICIUM ET SUBSTRAT EN NITRURE DE SILICIUM AINSI FABRIQUÉ
PARK KYU HWAN (author) / CHEONG HUN (author)
2024-03-13
Patent
Electronic Resource
English
IPC:
C04B
Kalk
,
LIME
European Patent Office | 2024
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