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Preparation method of ceramic substrate with high bonding strength
The invention belongs to the field of brazing, and discloses a preparation method of a high-bonding-strength ceramic substrate. The silicon nitride ceramic is subjected to surface denitrification treatment, and then is subjected to sheathing and hot isostatic pressing sintering to prepare the silicon nitride ceramic. And the Ag-Cu-Ti welding flux is subjected to chemical reaction with the denitrified silicon nitride ceramic and the metal copper to generate a transition layer so as to combine the metal copper and the silicon nitride ceramic. According to the preparation method, little welding flux is used, and the obtained ceramic substrate is high in bonding strength and small in size.
本发明属于钎焊领域，公开了一种高结合强度陶瓷基板的制备方法。对氮化硅陶瓷进行表面脱氮处理后，再经包套、热等静压烧结制备而成。Ag‑Cu‑Ti焊料与经过脱氮处理的氮化硅陶瓷和金属铜发生化学反应，生成过渡层来将金属铜和氮化硅陶瓷结合起来。该制备方法中使用极少的焊料，且得到的陶瓷基板结合强度高且体积小。
Preparation method of ceramic substrate with high bonding strength
The invention belongs to the field of brazing, and discloses a preparation method of a high-bonding-strength ceramic substrate. The silicon nitride ceramic is subjected to surface denitrification treatment, and then is subjected to sheathing and hot isostatic pressing sintering to prepare the silicon nitride ceramic. And the Ag-Cu-Ti welding flux is subjected to chemical reaction with the denitrified silicon nitride ceramic and the metal copper to generate a transition layer so as to combine the metal copper and the silicon nitride ceramic. According to the preparation method, little welding flux is used, and the obtained ceramic substrate is high in bonding strength and small in size.
本发明属于钎焊领域，公开了一种高结合强度陶瓷基板的制备方法。对氮化硅陶瓷进行表面脱氮处理后，再经包套、热等静压烧结制备而成。Ag‑Cu‑Ti焊料与经过脱氮处理的氮化硅陶瓷和金属铜发生化学反应，生成过渡层来将金属铜和氮化硅陶瓷结合起来。该制备方法中使用极少的焊料，且得到的陶瓷基板结合强度高且体积小。
Preparation method of ceramic substrate with high bonding strength
一种高结合强度陶瓷基板的制备方法
WANG XING'AN (author) / LUO LING (author) / HAN SHUANG (author) / SUN XUDONG (author) / HUI YU (author) / LYU HUI (author) / REN PEI (author) / BAI XIAOLONG (author) / SUN JING (author) / LI YANZHAO (author)
2023-12-22
Patent
Electronic Resource
Chinese
IPC:
C04B
Kalk
,
LIME
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