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Copper-ceramic bonded body and insulated circuit board
The copper-ceramic bonded body (10) has copper members (12, 13) comprising copper or a copper alloy and a ceramic member (11) comprising silicon nitride, the copper members (12, 13) and the ceramic member (11) are bonded, and an active metal nitride layer (21) is formed on the ceramic member (11) side at the bonding interface between the ceramic member (11) and the copper members (12, 13). The area ratio of an active metal compound containing Si and an active metal in a region 10 [mu] m from the active metal nitride layer (21) toward the copper member (12) is 10% or less. The ratio PA/PB of the area ratio PA of the active metal compound in the peripheral region (A) of the copper member (12) and the area ratio PB of the active metal compound in the central region (B) of the copper member (12) is within the range of 0.7-1.4.
该铜‑陶瓷接合体(10)具有由铜或铜合金构成的铜部件(12，13)及由氮化硅构成的陶瓷部件(11)，铜部件(12，13)和陶瓷部件(11)接合，在陶瓷部件(11)与铜部件(12，13)的接合界面处，在陶瓷部件(11)侧形成有活性金属氮化物层(21)，含Si及活性金属的活性金属化合物在从活性金属氮化物层(21)起向铜部件(12)侧10μm的区域中的面积率为10％以下，活性金属化合物在铜部件(12)的周缘部区域(A)中的面积率PA和活性金属化合物在铜部件(12)的中央部区域(B)中的面积率PB之比PA/PB在0.7以上且1.4以下的范围内。
Copper-ceramic bonded body and insulated circuit board
The copper-ceramic bonded body (10) has copper members (12, 13) comprising copper or a copper alloy and a ceramic member (11) comprising silicon nitride, the copper members (12, 13) and the ceramic member (11) are bonded, and an active metal nitride layer (21) is formed on the ceramic member (11) side at the bonding interface between the ceramic member (11) and the copper members (12, 13). The area ratio of an active metal compound containing Si and an active metal in a region 10 [mu] m from the active metal nitride layer (21) toward the copper member (12) is 10% or less. The ratio PA/PB of the area ratio PA of the active metal compound in the peripheral region (A) of the copper member (12) and the area ratio PB of the active metal compound in the central region (B) of the copper member (12) is within the range of 0.7-1.4.
该铜‑陶瓷接合体(10)具有由铜或铜合金构成的铜部件(12，13)及由氮化硅构成的陶瓷部件(11)，铜部件(12，13)和陶瓷部件(11)接合，在陶瓷部件(11)与铜部件(12，13)的接合界面处，在陶瓷部件(11)侧形成有活性金属氮化物层(21)，含Si及活性金属的活性金属化合物在从活性金属氮化物层(21)起向铜部件(12)侧10μm的区域中的面积率为10％以下，活性金属化合物在铜部件(12)的周缘部区域(A)中的面积率PA和活性金属化合物在铜部件(12)的中央部区域(B)中的面积率PB之比PA/PB在0.7以上且1.4以下的范围内。
Copper-ceramic bonded body and insulated circuit board
铜-陶瓷接合体及绝缘电路基板
TERASAKI NOBUYUKI (author)
2024-02-02
Patent
Electronic Resource
Chinese
IPC:
C04B
Kalk
,
LIME