A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
Silicon carbide ceramic part and preparation method thereof
The invention provides a silicon carbide ceramic part and a preparation method thereof, and the preparation method comprises the following steps: (1) carrying out cold isostatic pressing on silicon carbide powder to obtain a silicon carbide blank; the average particle size of the silicon carbide powder is 0.5-2 microns; and (2) sequentially carrying out sheath welding, degassing and hot isostatic pressing on the silicon carbide blank obtained in the step (1), and then removing the sheath to obtain the silicon carbide ceramic part. The silicon carbide ceramic parts with different sizes and shapes can be prepared by taking the silicon carbide powder with higher fineness as a raw material through a process of combining cold isostatic pressing and hot isostatic pressing, and the prepared silicon carbide ceramic parts are higher in purity and density and can meet the high-performance requirements for semiconductors.
本发明提供了一种碳化硅陶瓷零部件及其制备方法，所述制备方法包括以下步骤：(1)将碳化硅粉末进行冷等静压，得到碳化硅坯料；所述碳化硅粉末的平均粒径为0.5‑2μm；(2)将步骤(1)所得碳化硅坯料依次经包套焊接、脱气和热等静压，然后去除包套，得到所述碳化硅陶瓷零部件。本发明以细度较高的碳化硅粉末为原料，通过冷等静压以及热等静压相结合的工艺，可以制得不同尺寸和形状的碳化硅陶瓷零部件，且制得的碳化硅陶瓷零部件的纯度与致密度均较高，能够满足半导体用的高性能要求。
Silicon carbide ceramic part and preparation method thereof
The invention provides a silicon carbide ceramic part and a preparation method thereof, and the preparation method comprises the following steps: (1) carrying out cold isostatic pressing on silicon carbide powder to obtain a silicon carbide blank; the average particle size of the silicon carbide powder is 0.5-2 microns; and (2) sequentially carrying out sheath welding, degassing and hot isostatic pressing on the silicon carbide blank obtained in the step (1), and then removing the sheath to obtain the silicon carbide ceramic part. The silicon carbide ceramic parts with different sizes and shapes can be prepared by taking the silicon carbide powder with higher fineness as a raw material through a process of combining cold isostatic pressing and hot isostatic pressing, and the prepared silicon carbide ceramic parts are higher in purity and density and can meet the high-performance requirements for semiconductors.
本发明提供了一种碳化硅陶瓷零部件及其制备方法，所述制备方法包括以下步骤：(1)将碳化硅粉末进行冷等静压，得到碳化硅坯料；所述碳化硅粉末的平均粒径为0.5‑2μm；(2)将步骤(1)所得碳化硅坯料依次经包套焊接、脱气和热等静压，然后去除包套，得到所述碳化硅陶瓷零部件。本发明以细度较高的碳化硅粉末为原料，通过冷等静压以及热等静压相结合的工艺，可以制得不同尺寸和形状的碳化硅陶瓷零部件，且制得的碳化硅陶瓷零部件的纯度与致密度均较高，能够满足半导体用的高性能要求。
Silicon carbide ceramic part and preparation method thereof
一种碳化硅陶瓷零部件及其制备方法
YAO LIJUN (author) / WANG KE (author) / WANG JUBAO (author) / ZHOU MIN (author)
2024-06-07
Patent
Electronic Resource
Chinese
IPC:
C04B
Kalk
,
LIME
Silicon carbide ceramic and preparation method thereof, and semiconductor part
| European Patent Office | 2020
| European Patent Office | 2023
Ceramic part with complex silicon carbide structure and preparation method thereof
| European Patent Office | 2021