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Silicon carbide ceramic and preparation method thereof, and semiconductor part
The invention relates to a silicon carbide ceramic and a preparation method thereof, and a semiconductor part. The preparation method comprises the following steps: mixing silicon carbide micro-powder, a chloride of a metal element, propylene oxide, a first dispersing agent and a first solvent, and carrying out heating treatment under a vacuum condition at 700-900 DEG C to obtain pretreated particles, wherein the metal element is a rare earth element or a strontium element; mixing the pretreated particles, a second dispersing agent, a binder, a second solvent and a first carbon source, and granulating to obtain granulated powder; molding the granulated powder to obtain a first prefabricated billet; heating and mixing the first prefabricated billet and a second carbon source to enable the second carbon source to be in a liquid state, and pressurizing to 3 MPa-7 MPa to obtain a second prefabricated billet; and carrying out reactive sintering on the second prefabricated billet and siliconpowder to obtain the silicon carbide ceramic. According to the preparation method of the silicon carbide ceramic, the silicon carbide ceramic with good mechanical properties can be obtained.
本发明涉及一种碳化硅陶瓷及其制备方法和半导体零件。上述碳化硅陶瓷的制备方法包括如下步骤：将碳化硅微粉、金属元素的氯化物、环氧丙烷、第一分散剂及第一溶剂混合并在真空条件、700℃～900℃下进行加热处理，得到预处理颗粒，其中，金属元素为稀土元素或锶元素；将预处理颗粒与第二分散剂、粘结剂、第二溶剂和第一碳源混合并造粒，得到造粒粉；将造粒粉成型，得到第一预制坯；将第一预制坯与第二碳源加热混合，使第二碳源呈液态，然后加压至3MPa～7MPa，得到第二预制坯；将第二预制坯和硅粉进行反应烧结，得到碳化硅陶瓷。上述碳化硅陶瓷的制备方法能够得到力学性能较好的碳化硅陶瓷。
Silicon carbide ceramic and preparation method thereof, and semiconductor part
The invention relates to a silicon carbide ceramic and a preparation method thereof, and a semiconductor part. The preparation method comprises the following steps: mixing silicon carbide micro-powder, a chloride of a metal element, propylene oxide, a first dispersing agent and a first solvent, and carrying out heating treatment under a vacuum condition at 700-900 DEG C to obtain pretreated particles, wherein the metal element is a rare earth element or a strontium element; mixing the pretreated particles, a second dispersing agent, a binder, a second solvent and a first carbon source, and granulating to obtain granulated powder; molding the granulated powder to obtain a first prefabricated billet; heating and mixing the first prefabricated billet and a second carbon source to enable the second carbon source to be in a liquid state, and pressurizing to 3 MPa-7 MPa to obtain a second prefabricated billet; and carrying out reactive sintering on the second prefabricated billet and siliconpowder to obtain the silicon carbide ceramic. According to the preparation method of the silicon carbide ceramic, the silicon carbide ceramic with good mechanical properties can be obtained.
本发明涉及一种碳化硅陶瓷及其制备方法和半导体零件。上述碳化硅陶瓷的制备方法包括如下步骤：将碳化硅微粉、金属元素的氯化物、环氧丙烷、第一分散剂及第一溶剂混合并在真空条件、700℃～900℃下进行加热处理，得到预处理颗粒，其中，金属元素为稀土元素或锶元素；将预处理颗粒与第二分散剂、粘结剂、第二溶剂和第一碳源混合并造粒，得到造粒粉；将造粒粉成型，得到第一预制坯；将第一预制坯与第二碳源加热混合，使第二碳源呈液态，然后加压至3MPa～7MPa，得到第二预制坯；将第二预制坯和硅粉进行反应烧结，得到碳化硅陶瓷。上述碳化硅陶瓷的制备方法能够得到力学性能较好的碳化硅陶瓷。
Silicon carbide ceramic and preparation method thereof, and semiconductor part
碳化硅陶瓷及其制备方法和半导体零件
WANG SHAOLONG (author) / XIANG QIJUN (author) / TAN YICHENG (author)
2020-04-14
Patent
Electronic Resource
Chinese
IPC:
C04B
Kalk
,
LIME
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