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Process for combining thin film and aluminum oxide ceramic substrate
The invention provides a process for combining a thin film and an aluminum oxide ceramic substrate, which belongs to the technical field of thick thin film combination and comprises the following steps: preparing a multilayer aluminum oxide ceramic substrate; carrying out grinding and polishing treatment on the surface of the multi-layer aluminum oxide ceramic substrate; sputtering a metal layer on the surface of the multilayer aluminum oxide ceramic substrate; and performing photoetching and plating on the metal layer for multiple times to form a thin film structure. According to the technology for combining the thin film and the aluminum oxide ceramic substrate, the multi-layer aluminum oxide ceramic substrate is combined with the metal layer sputtered on the surface of the aluminum oxide ceramic substrate to form a thick film and thin film combined structure, and the defects of the multi-layer aluminum oxide ceramic substrate are made up through the characteristics of the thin film. The thin film and aluminum oxide ceramic substrate combination technology is adopted, the minimum line width and line spacing of the thin film technology is 20 microns, the thin and thick gold area layout is not limited, the metallization flatness is high, and the microwave transmission loss is small, and therefore the purposes of improving the wiring density and the integration level and reducing the microwave transmission loss are achieved by adopting the thin film and aluminum oxide ceramic substrate combination technology.
本发明提供了一种薄膜与氧化铝陶瓷基板的结合工艺，属于厚薄膜结合技术领域，包括以下步骤制备多层氧化铝陶瓷基板；对多层氧化铝陶瓷基板的表面进行研磨抛光处理；在多层氧化铝陶瓷基板的表面溅射金属层；对金属层进行多次光刻和镀覆形成薄膜结构。本发明提供的一种薄膜与氧化铝陶瓷基板的结合工艺，将多层氧化铝陶瓷基板与溅射在氧化铝陶瓷基板表面的金属层结合，形成厚膜结合薄膜的结构，利用薄膜自身的特性弥补多层氧化铝陶瓷基板的缺陷。薄膜工艺线宽线间距最小20μm，薄厚金区域布局不受限，且金属化平整度较高，微波传输损耗小，因此，本专利采用薄膜与氧化铝陶瓷基板的结合工艺，实现了提高布线密度和集成度，降低微波传输损耗的目标。
Process for combining thin film and aluminum oxide ceramic substrate
The invention provides a process for combining a thin film and an aluminum oxide ceramic substrate, which belongs to the technical field of thick thin film combination and comprises the following steps: preparing a multilayer aluminum oxide ceramic substrate; carrying out grinding and polishing treatment on the surface of the multi-layer aluminum oxide ceramic substrate; sputtering a metal layer on the surface of the multilayer aluminum oxide ceramic substrate; and performing photoetching and plating on the metal layer for multiple times to form a thin film structure. According to the technology for combining the thin film and the aluminum oxide ceramic substrate, the multi-layer aluminum oxide ceramic substrate is combined with the metal layer sputtered on the surface of the aluminum oxide ceramic substrate to form a thick film and thin film combined structure, and the defects of the multi-layer aluminum oxide ceramic substrate are made up through the characteristics of the thin film. The thin film and aluminum oxide ceramic substrate combination technology is adopted, the minimum line width and line spacing of the thin film technology is 20 microns, the thin and thick gold area layout is not limited, the metallization flatness is high, and the microwave transmission loss is small, and therefore the purposes of improving the wiring density and the integration level and reducing the microwave transmission loss are achieved by adopting the thin film and aluminum oxide ceramic substrate combination technology.
本发明提供了一种薄膜与氧化铝陶瓷基板的结合工艺，属于厚薄膜结合技术领域，包括以下步骤制备多层氧化铝陶瓷基板；对多层氧化铝陶瓷基板的表面进行研磨抛光处理；在多层氧化铝陶瓷基板的表面溅射金属层；对金属层进行多次光刻和镀覆形成薄膜结构。本发明提供的一种薄膜与氧化铝陶瓷基板的结合工艺，将多层氧化铝陶瓷基板与溅射在氧化铝陶瓷基板表面的金属层结合，形成厚膜结合薄膜的结构，利用薄膜自身的特性弥补多层氧化铝陶瓷基板的缺陷。薄膜工艺线宽线间距最小20μm，薄厚金区域布局不受限，且金属化平整度较高，微波传输损耗小，因此，本专利采用薄膜与氧化铝陶瓷基板的结合工艺，实现了提高布线密度和集成度，降低微波传输损耗的目标。
Process for combining thin film and aluminum oxide ceramic substrate
一种薄膜与氧化铝陶瓷基板的结合工艺
YU FEI (author) / YANG ZHENTAO (author) / ZHANG HE (author) / YU XIMENG (author) / ZHANG QIAN (author) / ZHANG HUIXIN (author) / REN HAODI (author) / LIU LINJIE (author)
2024-07-16
Patent
Electronic Resource
Chinese
IPC:
C04B
Kalk
,
LIME
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