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The invention discloses a preparation method of a ceramic metal target for a silicon-based thin-film resistor, and relates to the field of sputtering target processing, and the preparation method is characterized by comprising the following steps: step 1, weighing more than two of TiB2 powder, CrB2 powder, Si powder, Cr powder, SiC powder and C powder, and then carrying out ball milling; 2, carrying out centrifugal spray granulation treatment on the mixed powder; 3, the granulated powder is added into a cold pressing mold, and a biscuit is obtained through cold pressing; 4, putting the biscuit into a hot-pressing mold for mold filling; and 5, the graphite mold is placed below a pressing head of a vacuum hot pressing furnace, the mold is pre-pressed by 1-3 MPa, sintering parameters are set, the mold is taken out after the mold is cooled to the room temperature after sintering, and demolding is conducted. According to the preparation method of the ceramic metal target material for the silicon-based thin-film resistor, the high-purity silicon-based ceramic metal target material suitable for the magnetron sputtering thin-film resistor is successfully prepared by adopting a vacuum hot pressing method and adjusting a component proportion and process parameters.
本发明公开了一种硅基薄膜电阻用陶瓷金属靶材的制备方法，涉及溅射靶材加工领域，其技术方案要点是：步骤一：将TiB2粉、CrB2粉、Si粉、Cr粉、SiC粉、C粉中的两种以上粉末称重后球磨；步骤二：对混粉末进行离心喷雾造粒处理；步骤三：将造粒后的粉末加入到冷压模具内，冷压得到具有素坯；步骤四：将素坯放入热压模具内进行装模；步骤五：将石墨模具置于真空热压炉的压头下方，对模具进行预压1Mpa‑3MPa，设定烧结参数，烧结后降温至室温后取出模具并脱模。本发明的一种硅基薄膜电阻用陶瓷金属靶材的制备方法采用真空热压法并通过调整成分比例和工艺参数成功制备出了适用于磁控溅射薄膜电阻的高纯硅基陶瓷金属靶材。
The invention discloses a preparation method of a ceramic metal target for a silicon-based thin-film resistor, and relates to the field of sputtering target processing, and the preparation method is characterized by comprising the following steps: step 1, weighing more than two of TiB2 powder, CrB2 powder, Si powder, Cr powder, SiC powder and C powder, and then carrying out ball milling; 2, carrying out centrifugal spray granulation treatment on the mixed powder; 3, the granulated powder is added into a cold pressing mold, and a biscuit is obtained through cold pressing; 4, putting the biscuit into a hot-pressing mold for mold filling; and 5, the graphite mold is placed below a pressing head of a vacuum hot pressing furnace, the mold is pre-pressed by 1-3 MPa, sintering parameters are set, the mold is taken out after the mold is cooled to the room temperature after sintering, and demolding is conducted. According to the preparation method of the ceramic metal target material for the silicon-based thin-film resistor, the high-purity silicon-based ceramic metal target material suitable for the magnetron sputtering thin-film resistor is successfully prepared by adopting a vacuum hot pressing method and adjusting a component proportion and process parameters.
本发明公开了一种硅基薄膜电阻用陶瓷金属靶材的制备方法，涉及溅射靶材加工领域，其技术方案要点是：步骤一：将TiB2粉、CrB2粉、Si粉、Cr粉、SiC粉、C粉中的两种以上粉末称重后球磨；步骤二：对混粉末进行离心喷雾造粒处理；步骤三：将造粒后的粉末加入到冷压模具内，冷压得到具有素坯；步骤四：将素坯放入热压模具内进行装模；步骤五：将石墨模具置于真空热压炉的压头下方，对模具进行预压1Mpa‑3MPa，设定烧结参数，烧结后降温至室温后取出模具并脱模。本发明的一种硅基薄膜电阻用陶瓷金属靶材的制备方法采用真空热压法并通过调整成分比例和工艺参数成功制备出了适用于磁控溅射薄膜电阻的高纯硅基陶瓷金属靶材。
Preparation method of ceramic metal target material for silicon-based thin-film resistor
一种硅基薄膜电阻用陶瓷金属靶材的制备方法
ZHU WEI (author)
2024-09-13
Patent
Electronic Resource
Chinese
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