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Manufacturing method of low-iron-content pollution-free silicon carbide boat support for photovoltaics and semiconductors
The invention discloses a manufacturing method of a low-iron-content pollution-free silicon carbide boat support for photovoltaics and semiconductors, which comprises the following steps: pouring SiC powder into a pickling agent solution, and carrying out ultrasonic-assisted stirring pickling to obtain pickling slurry; the preparation method comprises the following steps: obtaining a boat support splitting part blank by adopting a slip casting process, naturally drying and drying the blank by hot air to discharge moisture, then fettling and carving the blank into a boat support splitting part semi-finished product meeting the size requirement, and purifying and sintering the semi-finished product in an induction furnace at the temperature of 2000-2300 DEG C under the protection of inert gas to obtain a silicon carbide boat support splitting part biscuit; splicing the silicon carbide boat support splitting part biscuits to form a complete boat support, feeding the boat support into a vacuum furnace, carrying out high-temperature siliconizing sintering treatment at 1650-1700 DEG C, taking out of a kiln, and carrying out grinding, sand blasting, fine cleaning, impurity removal, ultrasonic cleaning and drying process treatment to obtain the low-iron-content pollution-free silicon carbide boat support. And the method has relatively high social use value and application prospect.
本发明公开了一种光伏、半导体用低铁含量无污染碳化硅舟托的制造方法，将SiC粉体倒入酸洗剂溶液中，进行超声辅助搅拌酸洗，获得酸洗浆料；采用注浆成型工艺获得舟托拆分部件毛坯，坯体通过自然干燥、热风干燥排出水分后修坯雕刻成符合尺寸要求的舟托拆分部件半成品，半成品进入感应炉经过温度2000‑2300℃在惰性气体保护下高温纯化烧结，即得碳化硅舟托拆分部件素坯；将碳化硅舟托拆分部件素坯进行拼接，拼接成完整的舟托后送入真空炉经过1650～1700℃高温渗硅烧结处理，出窑后经过研磨、喷砂、精洗、除杂和超声波清洗、干燥工艺处理，得到低铁含量无污染碳化硅舟托，能够广泛用于光伏、半导体行业，具有较高的社会使用价值和应用前景。
Manufacturing method of low-iron-content pollution-free silicon carbide boat support for photovoltaics and semiconductors
The invention discloses a manufacturing method of a low-iron-content pollution-free silicon carbide boat support for photovoltaics and semiconductors, which comprises the following steps: pouring SiC powder into a pickling agent solution, and carrying out ultrasonic-assisted stirring pickling to obtain pickling slurry; the preparation method comprises the following steps: obtaining a boat support splitting part blank by adopting a slip casting process, naturally drying and drying the blank by hot air to discharge moisture, then fettling and carving the blank into a boat support splitting part semi-finished product meeting the size requirement, and purifying and sintering the semi-finished product in an induction furnace at the temperature of 2000-2300 DEG C under the protection of inert gas to obtain a silicon carbide boat support splitting part biscuit; splicing the silicon carbide boat support splitting part biscuits to form a complete boat support, feeding the boat support into a vacuum furnace, carrying out high-temperature siliconizing sintering treatment at 1650-1700 DEG C, taking out of a kiln, and carrying out grinding, sand blasting, fine cleaning, impurity removal, ultrasonic cleaning and drying process treatment to obtain the low-iron-content pollution-free silicon carbide boat support. And the method has relatively high social use value and application prospect.
本发明公开了一种光伏、半导体用低铁含量无污染碳化硅舟托的制造方法，将SiC粉体倒入酸洗剂溶液中，进行超声辅助搅拌酸洗，获得酸洗浆料；采用注浆成型工艺获得舟托拆分部件毛坯，坯体通过自然干燥、热风干燥排出水分后修坯雕刻成符合尺寸要求的舟托拆分部件半成品，半成品进入感应炉经过温度2000‑2300℃在惰性气体保护下高温纯化烧结，即得碳化硅舟托拆分部件素坯；将碳化硅舟托拆分部件素坯进行拼接，拼接成完整的舟托后送入真空炉经过1650～1700℃高温渗硅烧结处理，出窑后经过研磨、喷砂、精洗、除杂和超声波清洗、干燥工艺处理，得到低铁含量无污染碳化硅舟托，能够广泛用于光伏、半导体行业，具有较高的社会使用价值和应用前景。
Manufacturing method of low-iron-content pollution-free silicon carbide boat support for photovoltaics and semiconductors
一种光伏、半导体用低铁含量无污染碳化硅舟托的制造方法
HOU CHUNGUANG (author) / YU YONGQI (author) / WU GUOXIANG (author)
2024-11-05
Patent
Electronic Resource
Chinese
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