A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
METAL OXIDE SEMICONDUCTOR MATERIAL, TARGET MATERIAL AND PREPARATION METHOD THEREFOR, THIN FILM TRANSISTOR AND PREPARATION METHOD THEREFOR
A metal oxide semiconductor material, comprising: a semiconductor matrix material; and at least one rare earth compound doped in the semiconductor matrix material. The general formula of each rare earth compound is represented as (MFD)aAb. In the general formula (MFD)aAb, MFD is selected from one of rare earth elements capable of generating an f-d transition, A is selected from an element capable of causing a wavelength band of an absorption spectrum of the corresponding MFD having an f-d transition to be redshifted into a visible light wavelength band range, a is the number of atoms of the element MFD in the general formula (MFD)aAb, and b is the number of atoms of the element A.
METAL OXIDE SEMICONDUCTOR MATERIAL, TARGET MATERIAL AND PREPARATION METHOD THEREFOR, THIN FILM TRANSISTOR AND PREPARATION METHOD THEREFOR
A metal oxide semiconductor material, comprising: a semiconductor matrix material; and at least one rare earth compound doped in the semiconductor matrix material. The general formula of each rare earth compound is represented as (MFD)aAb. In the general formula (MFD)aAb, MFD is selected from one of rare earth elements capable of generating an f-d transition, A is selected from an element capable of causing a wavelength band of an absorption spectrum of the corresponding MFD having an f-d transition to be redshifted into a visible light wavelength band range, a is the number of atoms of the element MFD in the general formula (MFD)aAb, and b is the number of atoms of the element A.
METAL OXIDE SEMICONDUCTOR MATERIAL, TARGET MATERIAL AND PREPARATION METHOD THEREFOR, THIN FILM TRANSISTOR AND PREPARATION METHOD THEREFOR
METALLOXIDHALBLEITERMATERIAL, ZIELMATERIAL UND HERSTELLUNGSVERFAHREN DAFÜR, DÜNNSCHICHTTRANSISTOR UND HERSTELLUNGSVERFAHREN DAFÜR
MATÉRIAU SEMI-CONDUCTEUR À BASE D'OXYDE MÉTALLIQUE, MATÉRIAU CIBLE ET SON PROCÉDÉ DE PRÉPARATION, TRANSISTOR À COUCHE MINCE ET SON PROCÉDÉ DE PRÉPARATION
YUAN GUANGCAI (author) / LAN LINFENG (author) / LIU FENGJUAN (author) / NING CE (author) / HU HEHE (author) / WANG FEI (author) / PENG JUNBIAO (author)
2024-02-28
Patent
Electronic Resource
English
LANTHANIDE METAL-DOPED IZO TARGET MATERIAL, PREPARATION METHOD THEREFOR, AND APPLICATION THEREOF
| European Patent Office | 2024
CATIO3-BASED OXIDE THERMOELECTRIC MATERIAL AND PREPARATION METHOD THEREFOR
| European Patent Office | 2021