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HIGH FREQUENCY POLISHING OF CERAMICS
A method of polishing a surface of a polycrystalline sintered ceramic body, the method comprising the steps of: a) providing a sintered ceramic body comprising a polycrystalline material and having a density of from about 99.5% to about 99.999% of the polycrystalline material's theoretical density, wherein the sintered ceramic body has at least one surface; b) grinding the at least one surface until the surface has (I) a flatness of no more than 25 microns on average measured over four quadrants of the at least one surface at angles of 0°, 90°, 180°, and 270° as measured with a spherometer, (ii) an Ra of less than 14 microinches, and (iii) an Rz of less than 160 microinches; c) after the grinding step, lapping the at least one surface with a lapping plate and a lapping media slurry; d) after lapping, successively polishing the at least one surface in a series of polishing steps until the at least one surface exhibits an Ra value of ≤ 2 microinches and an Rz of ≤ 2 microinches and an absolute value for flatness of greater than 15 microns as measured with a spherometer, wherein the polishing is performed with a device comprising a plurality of orbital sanders that vibrate elliptically each of which comprises a polishing pad to contact the at least one surface during polishing, wherein the series of polishing steps comprises: i) a first polishing step wherein the polishing pads are used with a slurry of 4 to 10-micron grit particles; and ii) a second polishing step wherein the polishing pads are used with a slurry of from 1 to 3-micron grit particles.
HIGH FREQUENCY POLISHING OF CERAMICS
A method of polishing a surface of a polycrystalline sintered ceramic body, the method comprising the steps of: a) providing a sintered ceramic body comprising a polycrystalline material and having a density of from about 99.5% to about 99.999% of the polycrystalline material's theoretical density, wherein the sintered ceramic body has at least one surface; b) grinding the at least one surface until the surface has (I) a flatness of no more than 25 microns on average measured over four quadrants of the at least one surface at angles of 0°, 90°, 180°, and 270° as measured with a spherometer, (ii) an Ra of less than 14 microinches, and (iii) an Rz of less than 160 microinches; c) after the grinding step, lapping the at least one surface with a lapping plate and a lapping media slurry; d) after lapping, successively polishing the at least one surface in a series of polishing steps until the at least one surface exhibits an Ra value of ≤ 2 microinches and an Rz of ≤ 2 microinches and an absolute value for flatness of greater than 15 microns as measured with a spherometer, wherein the polishing is performed with a device comprising a plurality of orbital sanders that vibrate elliptically each of which comprises a polishing pad to contact the at least one surface during polishing, wherein the series of polishing steps comprises: i) a first polishing step wherein the polishing pads are used with a slurry of 4 to 10-micron grit particles; and ii) a second polishing step wherein the polishing pads are used with a slurry of from 1 to 3-micron grit particles.
HIGH FREQUENCY POLISHING OF CERAMICS
HOCHFREQUENZPOLIEREN VON KERAMIK
POLISSAGE HAUTE FRÉQUENCE DE CÉRAMIQUES
WALKER LUKE (author) / DONELON MATTHEW JOSEPH (author) / WAGHMARE SAURABH (author)
2025-02-05
Patent
Electronic Resource
English
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