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A platform for research: civil engineering, architecture and urbanism
OXIDE SINTERED COMPACT, SPUTTERING TARGET, THIN FILM AND METHOD FOR PRODUCING OXIDE SINTERED COMPACT
PROBLEM TO BE SOLVED: To provide an oxide sintered compact capable of forming a transparent conductive film having low bulk resistance, capable of DC sputtering and having desired refractive factor and permeability.SOLUTION: Provided is an oxide sintered compact capable of forming a transparent conductive film containing zinc(Zn), indium(In), titanium(Ti), gallium (Ga), germanium(Ge) and oxygen(O), in which the Zn content is 70 to 90mol% expressed in terms of ZnO, the In content is 2 to 15 mol% expressed in terms of InO, the Ti content is 1 to 10 mol% expressed in terms of TiO, the Ga content is 0.5 to 10 mol% expressed in terms of GaOand the Ge content is 0.5 to 10 mol% expressed in therms of GeO, having low bulk density, capable of DC sputtering and having desired refractive factor and permeability.SELECTED DRAWING: None
【課題】バルク抵抗が低くＤＣスパッタリングが可能であり、所望の屈折率や透過率を備えた透明導電膜を形成することができる酸化物焼結体並びに薄膜の提供。【解決手段】亜鉛（Ｚｎ）、インジウム（Ｉｎ）、チタン（Ｔｉ）、ガリウム（Ｇａ）、ゲルマニウム（Ｇｅ）、及び、酸素（Ｏ）からなり、Ｚｎ含有量がＺｎＯ換算で７０〜９０ｍｏｌ％、Ｉｎ含有量がＩｎ２Ｏ３換算で２〜１５ｍｏｌ％、Ｔｉ含有量がＴｉＯ２換算で１〜１０ｍｏｌ％、Ｇａ含有量がＧａ２Ｏ３換算で０．５〜１０ｍｏｌ％、Ｇｅ含有量がＧｅＯ２換算で０．５〜１０ｍｏｌ％であり、バルク抵抗が低くＤＣスパッタリングが可能であり、所望の屈折率や透過率を備えた透明導電膜を形成することができる酸化物焼結体。【選択図】なし
OXIDE SINTERED COMPACT, SPUTTERING TARGET, THIN FILM AND METHOD FOR PRODUCING OXIDE SINTERED COMPACT
PROBLEM TO BE SOLVED: To provide an oxide sintered compact capable of forming a transparent conductive film having low bulk resistance, capable of DC sputtering and having desired refractive factor and permeability.SOLUTION: Provided is an oxide sintered compact capable of forming a transparent conductive film containing zinc(Zn), indium(In), titanium(Ti), gallium (Ga), germanium(Ge) and oxygen(O), in which the Zn content is 70 to 90mol% expressed in terms of ZnO, the In content is 2 to 15 mol% expressed in terms of InO, the Ti content is 1 to 10 mol% expressed in terms of TiO, the Ga content is 0.5 to 10 mol% expressed in terms of GaOand the Ge content is 0.5 to 10 mol% expressed in therms of GeO, having low bulk density, capable of DC sputtering and having desired refractive factor and permeability.SELECTED DRAWING: None
【課題】バルク抵抗が低くＤＣスパッタリングが可能であり、所望の屈折率や透過率を備えた透明導電膜を形成することができる酸化物焼結体並びに薄膜の提供。【解決手段】亜鉛（Ｚｎ）、インジウム（Ｉｎ）、チタン（Ｔｉ）、ガリウム（Ｇａ）、ゲルマニウム（Ｇｅ）、及び、酸素（Ｏ）からなり、Ｚｎ含有量がＺｎＯ換算で７０〜９０ｍｏｌ％、Ｉｎ含有量がＩｎ２Ｏ３換算で２〜１５ｍｏｌ％、Ｔｉ含有量がＴｉＯ２換算で１〜１０ｍｏｌ％、Ｇａ含有量がＧａ２Ｏ３換算で０．５〜１０ｍｏｌ％、Ｇｅ含有量がＧｅＯ２換算で０．５〜１０ｍｏｌ％であり、バルク抵抗が低くＤＣスパッタリングが可能であり、所望の屈折率や透過率を備えた透明導電膜を形成することができる酸化物焼結体。【選択図】なし
OXIDE SINTERED COMPACT, SPUTTERING TARGET, THIN FILM AND METHOD FOR PRODUCING OXIDE SINTERED COMPACT
酸化物焼結体、スパッタリングターゲット及び薄膜並びに酸化物焼結体の製造方法
NARA ATSUSHI (author)
2016-04-21
Patent
Electronic Resource
Japanese
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