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OXIDE SINTERED COMPACT, SPUTTERING TARGET, THIN FILM AND METHOD OF PRODUCING OXIDE SINTERED COMPACT
A sintered oxide comprises zinc (Zn), indium (In), titan (Ti), gallium (Ga), germanium (Ge), and oxygen (O) while having Zn contents of 70-90 mol% by ZnO conversion, having In contents of 2-15 mol% by In_2O_3 conversion, having Ti contents of 1-10 mol% by TiO_2 conversion, having Ga contents of 0.5-10 mol% by Ga_2O_3 conversion, and having Ge contents of 0.5-10 mol% by GeO_2 conversion. According to the present invention, provided is a transparent conductive film having low bulk resistance rate, capable of DC sputtering, and having desired refractive index and transmissivity.
아연 (Zn), 인듐 (In), 티탄 (Ti), 갈륨 (Ga), 게르마늄 (Ge) 및 산소 (O) 로 이루어지고, Zn 함유량이 ZnO 환산으로 70 ∼ 90 ㏖％, In 함유량이 InO환산으로 2 ∼ 15 ㏖％, Ti 함유량이 TiO환산으로 1 ∼ 10 ㏖％, Ga 함유량이 GaO환산으로 0.5 ∼ 10 ㏖％, Ge 함유량이 GeO환산으로 0.5 ∼ 10 ㏖％ 인 것을 특징으로 하는 산화물 소결체. 본 발명에 의하면, 벌크 저항률이 낮고 DC 스퍼터링이 가능하고, 원하는 굴절률이나 투과율을 구비한 투명 도전막을 형성할 수 있다.
OXIDE SINTERED COMPACT, SPUTTERING TARGET, THIN FILM AND METHOD OF PRODUCING OXIDE SINTERED COMPACT
A sintered oxide comprises zinc (Zn), indium (In), titan (Ti), gallium (Ga), germanium (Ge), and oxygen (O) while having Zn contents of 70-90 mol% by ZnO conversion, having In contents of 2-15 mol% by In_2O_3 conversion, having Ti contents of 1-10 mol% by TiO_2 conversion, having Ga contents of 0.5-10 mol% by Ga_2O_3 conversion, and having Ge contents of 0.5-10 mol% by GeO_2 conversion. According to the present invention, provided is a transparent conductive film having low bulk resistance rate, capable of DC sputtering, and having desired refractive index and transmissivity.
아연 (Zn), 인듐 (In), 티탄 (Ti), 갈륨 (Ga), 게르마늄 (Ge) 및 산소 (O) 로 이루어지고, Zn 함유량이 ZnO 환산으로 70 ∼ 90 ㏖％, In 함유량이 InO환산으로 2 ∼ 15 ㏖％, Ti 함유량이 TiO환산으로 1 ∼ 10 ㏖％, Ga 함유량이 GaO환산으로 0.5 ∼ 10 ㏖％, Ge 함유량이 GeO환산으로 0.5 ∼ 10 ㏖％ 인 것을 특징으로 하는 산화물 소결체. 본 발명에 의하면, 벌크 저항률이 낮고 DC 스퍼터링이 가능하고, 원하는 굴절률이나 투과율을 구비한 투명 도전막을 형성할 수 있다.
OXIDE SINTERED COMPACT, SPUTTERING TARGET, THIN FILM AND METHOD OF PRODUCING OXIDE SINTERED COMPACT
산화물 소결체, 스퍼터링 타깃 및 박막 그리고 산화물 소결체의 제조 방법
NARA ATSUSHI (author)
2016-03-18
Patent
Electronic Resource
Korean
IPC:
C04B
Kalk
,
LIME
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