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OXIDE SINTERED COMPACT, METHOD FOR PRODUCING OXIDE SINTERED COMPACT, TARGET FOR SPUTTERING, AND AMORPHOUS OXIDE SEMICONDUCTOR THIN FILM
To provide an oxide sintered compact capable of forming an amorphous oxide semiconductor thin film showing a stable, low carrier concentration, and a high carrier mobility.SOLUTION: There is provided an oxide sintered compact comprising In, Si, and Sn as constituent elements, including an InOphase with a bixbyite type structure and an InSnOphase with a fluorite type structure, in which the content of the Si to the total of the In and Si satisfies the relational inequality of 0.05≤Si/(In+Si)≤0.3 by an atomic number ratio, and also, the content of the Sn to the total of the In, Si, and Sn satisfies the relational inequality of 0.1≤Sn/(In+Si+Sn)≤0.2.SELECTED DRAWING: None
【課題】安定して低いキャリア濃度と高いキャリア移動度を示す非晶質の酸化物半導体薄膜を形成することが可能な酸化物焼結体を提供する。【解決手段】構成元素として、Ｉｎ、Ｓｉ、及びＳｎを含有する酸化物焼結体であって、ビックスバイト型構造のＩｎ２Ｏ３相と蛍石型構造のＩｎ４Ｓｎ３Ｏ１２相とを含み、Ｉｎ及びＳｉの合計に対するＳｉの含有量が原子数比で０．０５≦Ｓｉ／（Ｉｎ＋Ｓｉ）≦０．３、かつＩｎ、Ｓｉ、及びＳｎの合計に対するＳｎの含有量が原子数比で０．１≦Ｓｎ／（Ｉｎ＋Ｓｉ＋Ｓｎ）≦０．２の関係式を満たす。【選択図】なし
OXIDE SINTERED COMPACT, METHOD FOR PRODUCING OXIDE SINTERED COMPACT, TARGET FOR SPUTTERING, AND AMORPHOUS OXIDE SEMICONDUCTOR THIN FILM
To provide an oxide sintered compact capable of forming an amorphous oxide semiconductor thin film showing a stable, low carrier concentration, and a high carrier mobility.SOLUTION: There is provided an oxide sintered compact comprising In, Si, and Sn as constituent elements, including an InOphase with a bixbyite type structure and an InSnOphase with a fluorite type structure, in which the content of the Si to the total of the In and Si satisfies the relational inequality of 0.05≤Si/(In+Si)≤0.3 by an atomic number ratio, and also, the content of the Sn to the total of the In, Si, and Sn satisfies the relational inequality of 0.1≤Sn/(In+Si+Sn)≤0.2.SELECTED DRAWING: None
【課題】安定して低いキャリア濃度と高いキャリア移動度を示す非晶質の酸化物半導体薄膜を形成することが可能な酸化物焼結体を提供する。【解決手段】構成元素として、Ｉｎ、Ｓｉ、及びＳｎを含有する酸化物焼結体であって、ビックスバイト型構造のＩｎ２Ｏ３相と蛍石型構造のＩｎ４Ｓｎ３Ｏ１２相とを含み、Ｉｎ及びＳｉの合計に対するＳｉの含有量が原子数比で０．０５≦Ｓｉ／（Ｉｎ＋Ｓｉ）≦０．３、かつＩｎ、Ｓｉ、及びＳｎの合計に対するＳｎの含有量が原子数比で０．１≦Ｓｎ／（Ｉｎ＋Ｓｉ＋Ｓｎ）≦０．２の関係式を満たす。【選択図】なし
OXIDE SINTERED COMPACT, METHOD FOR PRODUCING OXIDE SINTERED COMPACT, TARGET FOR SPUTTERING, AND AMORPHOUS OXIDE SEMICONDUCTOR THIN FILM
酸化物焼結体、酸化物焼結体の製造方法、スパッタリング用ターゲット、及び非晶質の酸化物半導体薄膜
MATSUMURA FUMIHIKO (author) / NAKAYAMA NORIYUKI (author)
2019-03-14
Patent
Electronic Resource
Japanese
IPC:
C04B
Kalk
,
LIME
/
C03B
Herstellung oder Formgebung von Glas, Mineral- oder Schlackenwolle
,
MANUFACTURE OR SHAPING OF GLASS, OR OF MINERAL OR SLAG WOOL
/
C03C
Chemische Zusammensetzungen für Gläser, Glasuren oder Emails
,
CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUS ENAMELS
/
C23C
Beschichten metallischer Werkstoffe
,
COATING METALLIC MATERIAL
/
H01L
Halbleiterbauelemente
,
SEMICONDUCTOR DEVICES
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