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PIEZOELECTRIC ELEMENT, PIEZOELECTRIC ELEMENT APPLICATION DEVICE, AND MANUFACTURING METHOD OF PIEZOELECTRIC ELEMENT
PROBLEM TO BE SOLVED: To provide: a piezoelectric element superior in the linearity of a displacement depending on an applied voltage; a piezoelectric element application device; and a method for manufacturing such a piezoelectric element.SOLUTION: A piezoelectric element comprises: a substrate 10; a first electrode 60 formed on the substrate; a piezoelectric material layer 70 formed on the first electrode 60, and including a composite oxide of ABOtype perovskite structure expressed by the formula (1) below; and a second electrode 80 formed on the piezoelectric material layer 70. The piezoelectric material layer is made of polycrystalline preferentially oriented in a (100) plane, and has a thickness of 50-2000 nm. With the piezoelectric material layer, an X-ray diffraction peak position (2θ) coming from the (100) plane is 22.51-22.95°. (K,Na)NbO(1).SELECTED DRAWING: Figure 2
【課題】 印加電圧に対する変位の線形性に優れる圧電素子及び圧電素子応用デバイス並びに圧電素子の製造方法を提供することを目的とする。【解決手段】 基板１０上に形成される第１電極６０と、前記第１電極６０上に形成され、下記式（１）で表されるＡＢＯ３型ペロブスカイト構造の複合酸化物を含む圧電体層７０と、前記圧電体層７０上に形成された第２電極８０と、を具備する圧電素子であって、前記圧電体層は、（１００）面に優先配向した多結晶からなり、５０ｎｍ以上２０００ｎｍ以下の厚さを有し、かつ、前記圧電体層の（１００）面に由来するＸ線の回折ピーク位置（２θ）が、２２．５１°以上２２．９５°以下である。（ＫＸ，Ｎａ１−Ｘ）ＮｂＯ３・・・ （１）【選択図】 図２
PIEZOELECTRIC ELEMENT, PIEZOELECTRIC ELEMENT APPLICATION DEVICE, AND MANUFACTURING METHOD OF PIEZOELECTRIC ELEMENT
PROBLEM TO BE SOLVED: To provide: a piezoelectric element superior in the linearity of a displacement depending on an applied voltage; a piezoelectric element application device; and a method for manufacturing such a piezoelectric element.SOLUTION: A piezoelectric element comprises: a substrate 10; a first electrode 60 formed on the substrate; a piezoelectric material layer 70 formed on the first electrode 60, and including a composite oxide of ABOtype perovskite structure expressed by the formula (1) below; and a second electrode 80 formed on the piezoelectric material layer 70. The piezoelectric material layer is made of polycrystalline preferentially oriented in a (100) plane, and has a thickness of 50-2000 nm. With the piezoelectric material layer, an X-ray diffraction peak position (2θ) coming from the (100) plane is 22.51-22.95°. (K,Na)NbO(1).SELECTED DRAWING: Figure 2
【課題】 印加電圧に対する変位の線形性に優れる圧電素子及び圧電素子応用デバイス並びに圧電素子の製造方法を提供することを目的とする。【解決手段】 基板１０上に形成される第１電極６０と、前記第１電極６０上に形成され、下記式（１）で表されるＡＢＯ３型ペロブスカイト構造の複合酸化物を含む圧電体層７０と、前記圧電体層７０上に形成された第２電極８０と、を具備する圧電素子であって、前記圧電体層は、（１００）面に優先配向した多結晶からなり、５０ｎｍ以上２０００ｎｍ以下の厚さを有し、かつ、前記圧電体層の（１００）面に由来するＸ線の回折ピーク位置（２θ）が、２２．５１°以上２２．９５°以下である。（ＫＸ，Ｎａ１−Ｘ）ＮｂＯ３・・・ （１）【選択図】 図２
PIEZOELECTRIC ELEMENT, PIEZOELECTRIC ELEMENT APPLICATION DEVICE, AND MANUFACTURING METHOD OF PIEZOELECTRIC ELEMENT
圧電素子及び圧電素子応用デバイス並びに圧電素子の製造方法
SUMI KOJI (author) / FURUBAYASHI TOMOKAZU (author) / KITADA KAZUYA (author)
2016-10-06
Patent
Electronic Resource
Japanese
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