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OXIDE SINTERED BODY AND MANUFACTURING METHOD THEREFOR
PROBLEM TO BE SOLVED: To provide a high density oxide sintered body mainly containing indium oxide and used as a sputtering target and a manufacturing method therefor.SOLUTION: There is provided an In2O3 sintered body containing tin as an additive element and having a ratio of atom number of tin and total sum of atom numbers of all metal elements in the sintered body is 0.01 to 0.2% and relative density of 98% or more. Preferably there is provided an In2O3-ZnO-Ga2O3 sintered body containing tin as the additive element and having a ratio of atom number of tin and total sum of atom numbers of all metal elements in the sintered body is 0.01 to 0.2% and relative density of 98% or more. There is provided an InO-ZnO-GaOsintered body with 0.2≤x/(x+y)≤0.8;0.1≤z/(x+y+z)≤0.5;a=(3/2)x+(3/2)y+z, where the sintered body is represented by InGaZnO.SELECTED DRAWING: None
【課題】スパッタリングターゲットとして用いる酸化インジウムを主成分とする高密度酸化物焼結体及びその製造方法の提供。【解決手段】添加元素としてスズを含有するIn2O3焼結体であって、スズの原子数の、焼結体中の全金属元素の原子数の総和に対する比率が0.01〜0.2%であり、相対密度が98%以上であるIn2O3焼結体。好ましくは、添加元素としてスズを含有するIn2O3−ZnO−Ga2O3焼結体であって、スズの原子数の、焼結体中の全金属元素の原子数の総和に対する比率が0.01〜0.2%であり、相対密度が98%以上であるIn2O3−ZnO−Ga2O3焼結体。前記焼結体をInxGayZnzOaとと表わした時、0.2≦x/(x+y)≦0.8;0.1≦z/(x+y+z)≦0.5;a=(3/2)x+(3/2)y+zであるIn2O3−ZnO−Ga2O3焼結体。【選択図】なし
OXIDE SINTERED BODY AND MANUFACTURING METHOD THEREFOR
PROBLEM TO BE SOLVED: To provide a high density oxide sintered body mainly containing indium oxide and used as a sputtering target and a manufacturing method therefor.SOLUTION: There is provided an In2O3 sintered body containing tin as an additive element and having a ratio of atom number of tin and total sum of atom numbers of all metal elements in the sintered body is 0.01 to 0.2% and relative density of 98% or more. Preferably there is provided an In2O3-ZnO-Ga2O3 sintered body containing tin as the additive element and having a ratio of atom number of tin and total sum of atom numbers of all metal elements in the sintered body is 0.01 to 0.2% and relative density of 98% or more. There is provided an InO-ZnO-GaOsintered body with 0.2≤x/(x+y)≤0.8;0.1≤z/(x+y+z)≤0.5;a=(3/2)x+(3/2)y+z, where the sintered body is represented by InGaZnO.SELECTED DRAWING: None
【課題】スパッタリングターゲットとして用いる酸化インジウムを主成分とする高密度酸化物焼結体及びその製造方法の提供。【解決手段】添加元素としてスズを含有するIn2O3焼結体であって、スズの原子数の、焼結体中の全金属元素の原子数の総和に対する比率が0.01〜0.2%であり、相対密度が98%以上であるIn2O3焼結体。好ましくは、添加元素としてスズを含有するIn2O3−ZnO−Ga2O3焼結体であって、スズの原子数の、焼結体中の全金属元素の原子数の総和に対する比率が0.01〜0.2%であり、相対密度が98%以上であるIn2O3−ZnO−Ga2O3焼結体。前記焼結体をInxGayZnzOaとと表わした時、0.2≦x/(x+y)≦0.8;0.1≦z/(x+y+z)≦0.5;a=(3/2)x+(3/2)y+zであるIn2O3−ZnO−Ga2O3焼結体。【選択図】なし
OXIDE SINTERED BODY AND MANUFACTURING METHOD THEREFOR
酸化物焼結体及びその製造方法
OSADA KOZO (author) / UBUSAWA MASAKATSU (author)
2017-08-17
Patent
Electronic Resource
Japanese
IPC:
C04B
Kalk
,
LIME
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