A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
OXIDE SINTERED BODY, SPUTTERING TARGET, OXIDE SEMICONDUCTOR FILM AND THIN-FILM TRANSISTOR
PROBLEM TO BE SOLVED: To provide a TFT having excellent TFT performance, an oxide semiconductor film for the TFT, a sputtering target for forming the oxide semiconductor film, and an oxide sintered body of the material thereof.SOLUTION: There are provided: an oxide sintered body which contains an oxide containing an In element, a Zn element, a Sn element, and a Y element, contains a bixbyite phase represented by In2O3 and a pyrochlore phase represented by Y2Sn2O7, and has a sintered body density of 100.00% or over of theoretical density thereof; a sputtering target comprising the oxide sintered body; and an oxide semiconductor film for a TFT, formed by using the sputtering target.SELECTED DRAWING: Figure 1
【課題】優れたＴＦＴ性能を発揮するＴＦＴ、当該ＴＦＴに用いることのできる酸化物半導体膜、当該酸化物半導体膜を形成できるスパッタリングターゲット、及びその材料である酸化物焼結体の提供。【解決手段】Ｉｎ元素、Ｚｎ元素、Ｓｎ元素及びＹ元素を含む酸化物を含み、Ｉｎ２Ｏ３で表されるビックスバイト相と、Ｙ２Ｓｎ２Ｏ７で表されるパイロクロア相を含み、焼結体密度が理論密度の１００．００％以上である酸化物焼結体であり、該酸化物焼結体からなるスパッタリングターゲット、及び該スパッタリングターゲットを用いて形成するＴＦＴ用酸化物半導体膜。【選択図】図１
OXIDE SINTERED BODY, SPUTTERING TARGET, OXIDE SEMICONDUCTOR FILM AND THIN-FILM TRANSISTOR
PROBLEM TO BE SOLVED: To provide a TFT having excellent TFT performance, an oxide semiconductor film for the TFT, a sputtering target for forming the oxide semiconductor film, and an oxide sintered body of the material thereof.SOLUTION: There are provided: an oxide sintered body which contains an oxide containing an In element, a Zn element, a Sn element, and a Y element, contains a bixbyite phase represented by In2O3 and a pyrochlore phase represented by Y2Sn2O7, and has a sintered body density of 100.00% or over of theoretical density thereof; a sputtering target comprising the oxide sintered body; and an oxide semiconductor film for a TFT, formed by using the sputtering target.SELECTED DRAWING: Figure 1
【課題】優れたＴＦＴ性能を発揮するＴＦＴ、当該ＴＦＴに用いることのできる酸化物半導体膜、当該酸化物半導体膜を形成できるスパッタリングターゲット、及びその材料である酸化物焼結体の提供。【解決手段】Ｉｎ元素、Ｚｎ元素、Ｓｎ元素及びＹ元素を含む酸化物を含み、Ｉｎ２Ｏ３で表されるビックスバイト相と、Ｙ２Ｓｎ２Ｏ７で表されるパイロクロア相を含み、焼結体密度が理論密度の１００．００％以上である酸化物焼結体であり、該酸化物焼結体からなるスパッタリングターゲット、及び該スパッタリングターゲットを用いて形成するＴＦＴ用酸化物半導体膜。【選択図】図１
OXIDE SINTERED BODY, SPUTTERING TARGET, OXIDE SEMICONDUCTOR FILM AND THIN-FILM TRANSISTOR
酸化物焼結体、スパッタリングターゲット、酸化物半導体膜及び薄膜トランジスタ
INOUE KAZUYOSHI (author) / UTSUNO FUTOSHI (author) / TOMAI SHIGEKAZU (author) / SHIBATA MASATOSHI (author) / ITOSE ASAMI (author)
2018-07-05
Patent
Electronic Resource
Japanese
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