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OXIDE SEMICONDUCTOR FILM, THIN FILM TRANSISTOR, OXIDE SINTERED BODY, AND SPUTTERING TARGET
An oxide semiconductor film that includes In, Ga, and Sn at atomic ratios within a range satisfying the following expressions (1) through (3), and includes Al at an atomic ratio within a range satisfying the following expression (4). (1): 0.01≤Ga/(In+Ga+Sn)≤0.30; (2): 0.01≤Sn/(In+Ga+Sn)≤0.40; (3): 0.55≤In/(In+Ga+Sn)≤0.98; (4): 0.05≤Al/(In+Ga+Sn+Al)≤0.30.
Cette invention concerne un film semi-conducteur à base d'oxydes qui contient du In, Ga et Sn dans des rapports atomiques dans une plage satisfaisant les expressions (1) à (3) suivantes, et contient du Al dans un rapport atomique dans une plage satisfaisant l'expression (4) suivante. (1) : 0,01 ≤ Ga/(In + Ga + Sn) ≤ 0,30; (2) : 0,01 ≤ Sn/(In + Ga + Sn) ≤ 0,40; (3) : 0,55 ≤ In/(In + Ga + Sn) ≤ 0,98; (4) : 0,05 ≤ Al/(In + Ga + Sn + Al) ≤ 0,30.
Ｉｎ、Ｇａ及びＳｎを下記式（１）から（３）を満たす範囲の原子比 ０．０１≦Ｇａ／（Ｉｎ＋Ｇａ＋Ｓｎ）≦０．３０ ・・・（１） ０．０１≦Ｓｎ／（Ｉｎ＋Ｇａ＋Ｓｎ）≦０．４０ ・・・（２） ０．５５≦Ｉｎ／（Ｉｎ＋Ｇａ＋Ｓｎ）≦０．９８ ・・・（３） で含有し、 かつ、Ａｌを下記式（４）を満たす範囲の原子比 ０．０５≦Ａｌ／（Ｉｎ＋Ｇａ＋Ｓｎ＋Ａｌ）≦０．３０ ・・・（４） で含有する酸化物半導体膜。
OXIDE SEMICONDUCTOR FILM, THIN FILM TRANSISTOR, OXIDE SINTERED BODY, AND SPUTTERING TARGET
An oxide semiconductor film that includes In, Ga, and Sn at atomic ratios within a range satisfying the following expressions (1) through (3), and includes Al at an atomic ratio within a range satisfying the following expression (4). (1): 0.01≤Ga/(In+Ga+Sn)≤0.30; (2): 0.01≤Sn/(In+Ga+Sn)≤0.40; (3): 0.55≤In/(In+Ga+Sn)≤0.98; (4): 0.05≤Al/(In+Ga+Sn+Al)≤0.30.
Cette invention concerne un film semi-conducteur à base d'oxydes qui contient du In, Ga et Sn dans des rapports atomiques dans une plage satisfaisant les expressions (1) à (3) suivantes, et contient du Al dans un rapport atomique dans une plage satisfaisant l'expression (4) suivante. (1) : 0,01 ≤ Ga/(In + Ga + Sn) ≤ 0,30; (2) : 0,01 ≤ Sn/(In + Ga + Sn) ≤ 0,40; (3) : 0,55 ≤ In/(In + Ga + Sn) ≤ 0,98; (4) : 0,05 ≤ Al/(In + Ga + Sn + Al) ≤ 0,30.
Ｉｎ、Ｇａ及びＳｎを下記式（１）から（３）を満たす範囲の原子比 ０．０１≦Ｇａ／（Ｉｎ＋Ｇａ＋Ｓｎ）≦０．３０ ・・・（１） ０．０１≦Ｓｎ／（Ｉｎ＋Ｇａ＋Ｓｎ）≦０．４０ ・・・（２） ０．５５≦Ｉｎ／（Ｉｎ＋Ｇａ＋Ｓｎ）≦０．９８ ・・・（３） で含有し、 かつ、Ａｌを下記式（４）を満たす範囲の原子比 ０．０５≦Ａｌ／（Ｉｎ＋Ｇａ＋Ｓｎ＋Ａｌ）≦０．３０ ・・・（４） で含有する酸化物半導体膜。
OXIDE SEMICONDUCTOR FILM, THIN FILM TRANSISTOR, OXIDE SINTERED BODY, AND SPUTTERING TARGET
FILM SEMI-CONDUCTEUR À BASE D'OXYDES, TRANSISTOR EN COUCHES MINCES, CORPS EN OXYDES FRITTÉ ET CIBLE DE PULVÉRISATION
酸化物半導体膜、薄膜トランジスタ、酸化物焼結体及びスパッタリングターゲット
INOUE KAZUYOSHI (author) / SHIBATA MASATOSHI (author)
2018-08-09
Patent
Electronic Resource
Japanese
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