A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
TARGET FOR TRANSPARENT CONDUCTIVE FILM DEPOSITION, METHOD FOR MANUFACTURING THE SAME AND METHOD FOR MANUFACTURING TRANSPARENT CONDUCTIVE FILM
PROBLEM TO BE SOLVED: To provide: a target for transparent conductive film deposition having high relative density and capable of suppressing the occurrence of arcing and particles during film deposition by sputtering; a transparent conductive film; a method for manufacturing the target for transparent conductive film deposition; and a method for manufacturing the transparent conductive film.SOLUTION: The target for transparent conductive film deposition includes In, Sn, Zn and O. Sn/(In+Sn+Zn) is 7-17 at%; Zn/(In+Sn+Zn) is 0.5-12 at%; an atomic ratio (Sn/Zn) of Sn to Zn is 1.3 or more; a peak intensity ratio (SnInO/InO) of a SnInOcrystal phase to an InOcrystal phase by XRD measurement is 0.10 or less; and a relative density is 97% or more.SELECTED DRAWING: None
【課題】相対密度が高く、スパッタ成膜時のアーキングやパーティクルの発生を抑制することが可能な透明導電膜形成用ターゲット、透明導電膜、透明導電膜形成用ターゲットの製造方法及び透明導電膜の製造方法の提供。【解決手段】Ｉｎ、Ｓｎ、Ｚｎ、Ｏを含み、Ｓｎ／（Ｉｎ＋Ｓｎ＋Ｚｎ）＝７〜１７ａｔ％，Ｚｎ／（Ｉｎ＋Ｓｎ＋Ｚｎ）＝０．５〜１２ａｔ％、ＳｎとＺｎの原子数比（Ｓｎ／Ｚｎ）が１．３以上であり、且つＸＲＤ測定によるＩｎ2Ｏ3結晶相に対するＳｎ3Ｉｎ4Ｏ12結晶相のピーク強度比（Ｓｎ3Ｉｎ4Ｏ12／Ｉｎ2Ｏ3）が０．１０以下であり、相対密度が９７％以上である透明導電膜形成用ターゲット。【選択図】なし
TARGET FOR TRANSPARENT CONDUCTIVE FILM DEPOSITION, METHOD FOR MANUFACTURING THE SAME AND METHOD FOR MANUFACTURING TRANSPARENT CONDUCTIVE FILM
PROBLEM TO BE SOLVED: To provide: a target for transparent conductive film deposition having high relative density and capable of suppressing the occurrence of arcing and particles during film deposition by sputtering; a transparent conductive film; a method for manufacturing the target for transparent conductive film deposition; and a method for manufacturing the transparent conductive film.SOLUTION: The target for transparent conductive film deposition includes In, Sn, Zn and O. Sn/(In+Sn+Zn) is 7-17 at%; Zn/(In+Sn+Zn) is 0.5-12 at%; an atomic ratio (Sn/Zn) of Sn to Zn is 1.3 or more; a peak intensity ratio (SnInO/InO) of a SnInOcrystal phase to an InOcrystal phase by XRD measurement is 0.10 or less; and a relative density is 97% or more.SELECTED DRAWING: None
【課題】相対密度が高く、スパッタ成膜時のアーキングやパーティクルの発生を抑制することが可能な透明導電膜形成用ターゲット、透明導電膜、透明導電膜形成用ターゲットの製造方法及び透明導電膜の製造方法の提供。【解決手段】Ｉｎ、Ｓｎ、Ｚｎ、Ｏを含み、Ｓｎ／（Ｉｎ＋Ｓｎ＋Ｚｎ）＝７〜１７ａｔ％，Ｚｎ／（Ｉｎ＋Ｓｎ＋Ｚｎ）＝０．５〜１２ａｔ％、ＳｎとＺｎの原子数比（Ｓｎ／Ｚｎ）が１．３以上であり、且つＸＲＤ測定によるＩｎ2Ｏ3結晶相に対するＳｎ3Ｉｎ4Ｏ12結晶相のピーク強度比（Ｓｎ3Ｉｎ4Ｏ12／Ｉｎ2Ｏ3）が０．１０以下であり、相対密度が９７％以上である透明導電膜形成用ターゲット。【選択図】なし
TARGET FOR TRANSPARENT CONDUCTIVE FILM DEPOSITION, METHOD FOR MANUFACTURING THE SAME AND METHOD FOR MANUFACTURING TRANSPARENT CONDUCTIVE FILM
透明導電膜形成用ターゲット、透明導電膜形成用ターゲットの製造方法及び透明導電膜の製造方法
HIDESHIMA MASAAKI (author)
2018-07-05
Patent
Electronic Resource
Japanese
METHOD OF MANUFACTURING TRANSPARENT CONDUCTIVE FILM, AND TRANSPARENT CONDUCTIVE FILM
| European Patent Office | 2017
Manufacturing method of sputtering target and transparent conductive film
| European Patent Office | 2018
| European Patent Office | 2017