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OXIDE SINTERED BODY, SPUTTERING TARGET AND MANUFACTURING METHOD OF OXIDE THIN FILM
To provide a sputtering target that can stably conduct sputtering and an oxide sintered body for manufacturing it.SOLUTION: An oxide sintered body according to one aspect of the embodiment is the oxide sintered body including indium, gallium and zinc in the fraction satisfying the following formula of (1) to (3). The oxide sintered body is composed of the crystalline phase as single phase, and a mean particle diameter of the crystalline phase is less than or equal to 15.0 μm. 0.01≤In/(In+Ga+Zn)<0.20 (1), 0.10≤Ga/(In+Ga+Zn)≤0.49 (2), 0.50≤Zn/(In+Ga+Zn)≤0.89 (3)SELECTED DRAWING: Figure 4
【課題】スパッタリングを安定して行うことができるスパッタリングターゲットおよびそれを製造するための酸化物焼結体を提供する。【解決手段】実施形態の一様態に係る酸化物焼結体は、インジウム、ガリウムおよび亜鉛を、以下の式（１）〜（３）を満たす比率で含む酸化物焼結体であって、単相の結晶相で構成され、結晶相の平均粒径が１５．０μｍ以下である。０．０１≦Ｉｎ／（Ｉｎ＋Ｇａ＋Ｚｎ）＜０．２０ ・・（１）０．１０≦Ｇａ／（Ｉｎ＋Ｇａ＋Ｚｎ）≦０．４９ ・・（２）０．５０≦Ｚｎ／（Ｉｎ＋Ｇａ＋Ｚｎ）≦０．８９ ・・（３）【選択図】図４
OXIDE SINTERED BODY, SPUTTERING TARGET AND MANUFACTURING METHOD OF OXIDE THIN FILM
To provide a sputtering target that can stably conduct sputtering and an oxide sintered body for manufacturing it.SOLUTION: An oxide sintered body according to one aspect of the embodiment is the oxide sintered body including indium, gallium and zinc in the fraction satisfying the following formula of (1) to (3). The oxide sintered body is composed of the crystalline phase as single phase, and a mean particle diameter of the crystalline phase is less than or equal to 15.0 μm. 0.01≤In/(In+Ga+Zn)<0.20 (1), 0.10≤Ga/(In+Ga+Zn)≤0.49 (2), 0.50≤Zn/(In+Ga+Zn)≤0.89 (3)SELECTED DRAWING: Figure 4
【課題】スパッタリングを安定して行うことができるスパッタリングターゲットおよびそれを製造するための酸化物焼結体を提供する。【解決手段】実施形態の一様態に係る酸化物焼結体は、インジウム、ガリウムおよび亜鉛を、以下の式（１）〜（３）を満たす比率で含む酸化物焼結体であって、単相の結晶相で構成され、結晶相の平均粒径が１５．０μｍ以下である。０．０１≦Ｉｎ／（Ｉｎ＋Ｇａ＋Ｚｎ）＜０．２０ ・・（１）０．１０≦Ｇａ／（Ｉｎ＋Ｇａ＋Ｚｎ）≦０．４９ ・・（２）０．５０≦Ｚｎ／（Ｉｎ＋Ｇａ＋Ｚｎ）≦０．８９ ・・（３）【選択図】図４
OXIDE SINTERED BODY, SPUTTERING TARGET AND MANUFACTURING METHOD OF OXIDE THIN FILM
酸化物焼結体、スパッタリングターゲットおよび酸化物薄膜の製造方法
TERAMURA KYOSUKE (author) / FUKAGAWA KOJI (author)
2019-10-31
Patent
Electronic Resource
Japanese
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