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COMPOSITE SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME
To provide a composite substrate having excellent heat radiation characteristics and frequency characteristics.SOLUTION: A composite substrate 1 comprises a support body layer 2 made of an aluminum nitride sintered body and a semiconductor crystal layer 3 made of at least one kind of a semiconductor material selected from a group composed of GaAs, AlGaAs, InGaAs, GaAsP, InGaAsP, Si, GaN, GaN, SiC, InP and a single crystal AlN that is bonded on the support body layer. At an interface of the support body layer 1 and a semiconductor crystal layer 2, the support layer 1 and the semiconductor crystal layer 2 are in direct contact.SELECTED DRAWING: Figure 1
【課題】放熱特性及び周波数特性に優れた複合基板を提供する。【解決手段】本発明の複合基板1は、窒化アルミニウム焼結体からなる支持体層2と、支持体層上に接合された、GaAs、AlGaAs、InGaAs、GaAsP、InGaAsP、Si、GaN、GaN2、SiC、InP、単結晶AlNの群から選択される少なくとも一種の半導体材料からなる半導体結晶層3と、を備える。支持体層1及び半導体結晶層2の界面において、支持体層1及び半導体結晶層2が直接的に接触している。【選択図】図1
COMPOSITE SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME
To provide a composite substrate having excellent heat radiation characteristics and frequency characteristics.SOLUTION: A composite substrate 1 comprises a support body layer 2 made of an aluminum nitride sintered body and a semiconductor crystal layer 3 made of at least one kind of a semiconductor material selected from a group composed of GaAs, AlGaAs, InGaAs, GaAsP, InGaAsP, Si, GaN, GaN, SiC, InP and a single crystal AlN that is bonded on the support body layer. At an interface of the support body layer 1 and a semiconductor crystal layer 2, the support layer 1 and the semiconductor crystal layer 2 are in direct contact.SELECTED DRAWING: Figure 1
【課題】放熱特性及び周波数特性に優れた複合基板を提供する。【解決手段】本発明の複合基板1は、窒化アルミニウム焼結体からなる支持体層2と、支持体層上に接合された、GaAs、AlGaAs、InGaAs、GaAsP、InGaAsP、Si、GaN、GaN2、SiC、InP、単結晶AlNの群から選択される少なくとも一種の半導体材料からなる半導体結晶層3と、を備える。支持体層1及び半導体結晶層2の界面において、支持体層1及び半導体結晶層2が直接的に接触している。【選択図】図1
COMPOSITE SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME
複合基板、及び、複合基板の製造方法
AMANO CHIKARA (author) / MAEDA SEIJI (author) / NISHIZONO KAZUNORI (author) / TAKAHASHI MITSUTAKA (author)
2019-11-07
Patent
Electronic Resource
Japanese
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