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POLYCRYSTALLINE SILICON CARBIDE SUBSTRATE AND METHOD FOR PRODUCING THE SAME
To provide a polycrystalline silicon carbide substrate that has no air gaps that would interfere with the lamination of a single-crystal silicon carbide substrate with a polycrystalline silicon carbide substrate, and a method for manufacturing the same, with low resistance and less handling damage.SOLUTION: A method for producing a polycrystalline silicon carbide substrate, comprising a heat treatment process in which silicon carbide powders are heated under a nitrogen gas atmosphere, a sintering process in which the silicon carbide powders after the heat treatment process are sintered under a nitrogen gas atmosphere, and a film deposition process in which a polycrystalline silicon carbide film is deposited by chemical vapor deposition on a surface of the sintered product obtained by the sintering process.SELECTED DRAWING: Figure 1
【課題】炭化珪素単結晶基板と炭化珪素多結晶基板との貼り合せに支障が生じるような空隙がなく、低抵抗で、ハンドリングで損傷しにくい炭化珪素多結晶基板、およびその製造方法を提供する。【解決手段】炭化珪素粉末を窒素ガス雰囲気下で加熱処理する加熱処理工程と、前記加熱処理工程後の前記炭化珪素粉末を、窒素ガス雰囲気下で焼結する焼結工程と、前記焼結工程により得た焼結体の表面に、化学蒸着によって炭化珪素多結晶膜を成膜する成膜工程を含む、炭化珪素多結晶基板の製造方法。【選択図】図１
POLYCRYSTALLINE SILICON CARBIDE SUBSTRATE AND METHOD FOR PRODUCING THE SAME
To provide a polycrystalline silicon carbide substrate that has no air gaps that would interfere with the lamination of a single-crystal silicon carbide substrate with a polycrystalline silicon carbide substrate, and a method for manufacturing the same, with low resistance and less handling damage.SOLUTION: A method for producing a polycrystalline silicon carbide substrate, comprising a heat treatment process in which silicon carbide powders are heated under a nitrogen gas atmosphere, a sintering process in which the silicon carbide powders after the heat treatment process are sintered under a nitrogen gas atmosphere, and a film deposition process in which a polycrystalline silicon carbide film is deposited by chemical vapor deposition on a surface of the sintered product obtained by the sintering process.SELECTED DRAWING: Figure 1
【課題】炭化珪素単結晶基板と炭化珪素多結晶基板との貼り合せに支障が生じるような空隙がなく、低抵抗で、ハンドリングで損傷しにくい炭化珪素多結晶基板、およびその製造方法を提供する。【解決手段】炭化珪素粉末を窒素ガス雰囲気下で加熱処理する加熱処理工程と、前記加熱処理工程後の前記炭化珪素粉末を、窒素ガス雰囲気下で焼結する焼結工程と、前記焼結工程により得た焼結体の表面に、化学蒸着によって炭化珪素多結晶膜を成膜する成膜工程を含む、炭化珪素多結晶基板の製造方法。【選択図】図１
POLYCRYSTALLINE SILICON CARBIDE SUBSTRATE AND METHOD FOR PRODUCING THE SAME
炭化珪素多結晶基板およびその製造方法
SATO TAKASHI (author)
2020-06-11
Patent
Electronic Resource
Japanese
POLYCRYSTALLINE SILICON CARBIDE SUBSTRATE WITH DENSITY GRADIENT AND METHOD OF MANUFACTURING THE SAME
| European Patent Office | 2024
| European Patent Office | 2015
| European Patent Office | 2021