A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
POLYCRYSTALLINE SILICON CARBIDE SUBSTRATE WITH DENSITY GRADIENT AND METHOD OF MANUFACTURING THE SAME
To provide a silicon carbide substrate with a higher density and a smoother surface.SOLUTION: A polycrystalline silicon carbide (SiC) substrate has a density gradient between a first side 102 of the polycrystalline SiC substrate and a second side 104 of the polycrystalline SiC substrate opposite to the first side. A first density at the first side of the polycrystalline SiC substrate is less than a second density at the second side of the polycrystalline SiC substrate. The polycrystalline SiC substrate with the density gradient may be formed by forming a polycrystalline SiC base substrate with a sintering process and a subsequent post-sintering process. For example, the post-sintering process may be at least one of: applying a first temperature to the first side of the polycrystalline SiC substrate and a second temperature to the second side thereof; and performing a chemical vapor deposition (CVD) process to impregnate further silicon (Si) and carbon (C) atoms into the polycrystalline SiC base substrate.SELECTED DRAWING: Figure 1A
【課題】より高い密度、より平滑な表面を有するシリコンカーバイド基板を提供する。【解決手段】多結晶シリコンカーバイド（ＳｉＣ）基板の第１の側１０２と、第１の側とは反対の、多結晶ＳｉＣ基板の第２の側１０４との間に密度勾配を有する、多結晶ＳｉＣ基板。多結晶ＳｉＣ基板の第１の側における第１の密度は、多結晶ＳｉＣ基板の第２の側における第２の密度よりも小さい。密度勾配を有する多結晶ＳｉＣ基板は、焼結プロセス、続いての焼結後プロセスによって多結晶ＳｉＣベース基板を形成することによって形成され得る。例えば、焼結後プロセスは、多結晶ＳｉＣ基板の第１の側に第１の温度を適用し、第２の側に第２の温度を適用すること、及び化学蒸着（ＣＶＤ）プロセスを実行して、多結晶ＳｉＣベース基板に更なるケイ素（Ｓｉ）及び炭素（Ｃ）の原子を含浸させることのうちの少なくとも１つであり得る。【選択図】図１Ａ
POLYCRYSTALLINE SILICON CARBIDE SUBSTRATE WITH DENSITY GRADIENT AND METHOD OF MANUFACTURING THE SAME
To provide a silicon carbide substrate with a higher density and a smoother surface.SOLUTION: A polycrystalline silicon carbide (SiC) substrate has a density gradient between a first side 102 of the polycrystalline SiC substrate and a second side 104 of the polycrystalline SiC substrate opposite to the first side. A first density at the first side of the polycrystalline SiC substrate is less than a second density at the second side of the polycrystalline SiC substrate. The polycrystalline SiC substrate with the density gradient may be formed by forming a polycrystalline SiC base substrate with a sintering process and a subsequent post-sintering process. For example, the post-sintering process may be at least one of: applying a first temperature to the first side of the polycrystalline SiC substrate and a second temperature to the second side thereof; and performing a chemical vapor deposition (CVD) process to impregnate further silicon (Si) and carbon (C) atoms into the polycrystalline SiC base substrate.SELECTED DRAWING: Figure 1A
【課題】より高い密度、より平滑な表面を有するシリコンカーバイド基板を提供する。【解決手段】多結晶シリコンカーバイド（ＳｉＣ）基板の第１の側１０２と、第１の側とは反対の、多結晶ＳｉＣ基板の第２の側１０４との間に密度勾配を有する、多結晶ＳｉＣ基板。多結晶ＳｉＣ基板の第１の側における第１の密度は、多結晶ＳｉＣ基板の第２の側における第２の密度よりも小さい。密度勾配を有する多結晶ＳｉＣ基板は、焼結プロセス、続いての焼結後プロセスによって多結晶ＳｉＣベース基板を形成することによって形成され得る。例えば、焼結後プロセスは、多結晶ＳｉＣ基板の第１の側に第１の温度を適用し、第２の側に第２の温度を適用すること、及び化学蒸着（ＣＶＤ）プロセスを実行して、多結晶ＳｉＣベース基板に更なるケイ素（Ｓｉ）及び炭素（Ｃ）の原子を含浸させることのうちの少なくとも１つであり得る。【選択図】図１Ａ
POLYCRYSTALLINE SILICON CARBIDE SUBSTRATE WITH DENSITY GRADIENT AND METHOD OF MANUFACTURING THE SAME
密度勾配を有する多結晶シリコンカーバイド基板及びその製造方法
BJOERN MAGNUSSON LINDGREN (author) / CARLO RIVA (author)
2024-10-16
Patent
Electronic Resource
Japanese
IPC:
C04B
Kalk
,
LIME
POLYCRYSTALLINE SILICON CARBIDE SUBSTRATE AND METHOD FOR PRODUCING THE SAME
| European Patent Office | 2020
| European Patent Office | 2020
Polycrystalline SiC substrate and method for manufacturing same
| European Patent Office | 2021
Manufacturing method for clean type silicon carbide substrate
| European Patent Office | 2024