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A platform for research: civil engineering, architecture and urbanism
DIELECTRIC THIN FILM, ELECTRONIC COMPONENT, THIN FILM CAPACITOR, AND ELECTRONIC CIRCUIT BOARD
To provide a dielectric thin film having excellent temperature characteristics.SOLUTION: A dielectric thin film includes an oxide having a perovskite structure. The oxide contains Bi, an element E1, an element E2, and Ti. The element E1 is at least one element selected from the group consisting of Na and K. The element E2 is at least one element selected from the group consisting of Ca, Sr, and Ba. The dielectric thin film includes a square crystal of oxide and a rhombic crystal of oxide.SELECTED DRAWING: Figure 2
【課題】温度特性に優れた誘電体薄膜の提供。【解決手段】誘電体薄膜は、ペロブスカイト構造を有する酸化物を含み、酸化物が、Ｂｉ、元素Ｅ１、元素Ｅ２、及びＴｉを含み、元素Ｅ１が、Ｎａ及びＫからなる群より選ばれる少なくとも一つの元素であり、元素Ｅ２が、Ｃａ、Ｓｒ、及びＢａからなる群より選ばれる少なくとも一つの元素であり、酸化物の正方晶、及び酸化物の菱面体晶を含む。【選択図】図２
DIELECTRIC THIN FILM, ELECTRONIC COMPONENT, THIN FILM CAPACITOR, AND ELECTRONIC CIRCUIT BOARD
To provide a dielectric thin film having excellent temperature characteristics.SOLUTION: A dielectric thin film includes an oxide having a perovskite structure. The oxide contains Bi, an element E1, an element E2, and Ti. The element E1 is at least one element selected from the group consisting of Na and K. The element E2 is at least one element selected from the group consisting of Ca, Sr, and Ba. The dielectric thin film includes a square crystal of oxide and a rhombic crystal of oxide.SELECTED DRAWING: Figure 2
【課題】温度特性に優れた誘電体薄膜の提供。【解決手段】誘電体薄膜は、ペロブスカイト構造を有する酸化物を含み、酸化物が、Ｂｉ、元素Ｅ１、元素Ｅ２、及びＴｉを含み、元素Ｅ１が、Ｎａ及びＫからなる群より選ばれる少なくとも一つの元素であり、元素Ｅ２が、Ｃａ、Ｓｒ、及びＢａからなる群より選ばれる少なくとも一つの元素であり、酸化物の正方晶、及び酸化物の菱面体晶を含む。【選択図】図２
DIELECTRIC THIN FILM, ELECTRONIC COMPONENT, THIN FILM CAPACITOR, AND ELECTRONIC CIRCUIT BOARD
誘電体薄膜、電子部品、薄膜キャパシタ及び電子回路基板
OTSUKI SHIRO (author) / TAKAHASHI KAZUKO (author) / HARADA YOSHINORI (author) / SUZUKI SHOTA (author) / KAGAYA YASUNAGA (author) / KATO TOMOHIKO (author)
2020-10-01
Patent
Electronic Resource
Japanese
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