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DIELECTRIC THIN FILM, ELECTRONIC COMPONENT, THIN FILM CAPACITOR AND ELECTRONIC CIRCUIT BOARD
To provide a dielectric thin film having a high withstand voltage.SOLUTION: A dielectric thin film comprises an oxide having a perovskite structure. The oxide contains Bi, an element E1, an element E2 and Ti. The element E1 is at least one element selected from a group consisting of Na and K. The element E2 is at least one element selected from a group consisting of Ca, Sr and Ba. One crystal plane of the oxide is oriented in a normal direction of a surface of the dielectric thin film. The crystal plane is selected from a group consisting of (100) plane, (110) plane, and (111) plane. Each crystal plane has an orientation degree represented by a Harris texture coefficient. The orientation degree of any of the crystal plane is 1.6 to 2.5.SELECTED DRAWING: Figure 2
【課題】高い耐電圧を有する誘電体薄膜の提供。【解決手段】誘電体薄膜は、ペロブスカイト構造を有する酸化物を含み、酸化物が、Ｂｉ、元素Ｅ１、元素Ｅ２、及びＴｉを含み、元素Ｅ１が、Ｎａ及びＫからなる群より選ばれる少なくとも一つの元素であり、元素Ｅ２が、Ｃａ、Ｓｒ、及びＢａからなる群より選ばれる少なくとも一つの元素であり、酸化物の一つの結晶面が、誘電体薄膜の表面の法線方向において配向しており、結晶面が、（１００）面、（１１０）面、及び（１１１）面からなる群より選ばれ、各結晶面の配向度がＨａｒｒｉｓ ｔｅｘｔｕｒｅ ｃｏｅｆｆｉｃｉｅｎｔによって表され、いずれかの結晶面の配向度が１．６以上２．５以下である。【選択図】図２
DIELECTRIC THIN FILM, ELECTRONIC COMPONENT, THIN FILM CAPACITOR AND ELECTRONIC CIRCUIT BOARD
To provide a dielectric thin film having a high withstand voltage.SOLUTION: A dielectric thin film comprises an oxide having a perovskite structure. The oxide contains Bi, an element E1, an element E2 and Ti. The element E1 is at least one element selected from a group consisting of Na and K. The element E2 is at least one element selected from a group consisting of Ca, Sr and Ba. One crystal plane of the oxide is oriented in a normal direction of a surface of the dielectric thin film. The crystal plane is selected from a group consisting of (100) plane, (110) plane, and (111) plane. Each crystal plane has an orientation degree represented by a Harris texture coefficient. The orientation degree of any of the crystal plane is 1.6 to 2.5.SELECTED DRAWING: Figure 2
【課題】高い耐電圧を有する誘電体薄膜の提供。【解決手段】誘電体薄膜は、ペロブスカイト構造を有する酸化物を含み、酸化物が、Ｂｉ、元素Ｅ１、元素Ｅ２、及びＴｉを含み、元素Ｅ１が、Ｎａ及びＫからなる群より選ばれる少なくとも一つの元素であり、元素Ｅ２が、Ｃａ、Ｓｒ、及びＢａからなる群より選ばれる少なくとも一つの元素であり、酸化物の一つの結晶面が、誘電体薄膜の表面の法線方向において配向しており、結晶面が、（１００）面、（１１０）面、及び（１１１）面からなる群より選ばれ、各結晶面の配向度がＨａｒｒｉｓ ｔｅｘｔｕｒｅ ｃｏｅｆｆｉｃｉｅｎｔによって表され、いずれかの結晶面の配向度が１．６以上２．５以下である。【選択図】図２
DIELECTRIC THIN FILM, ELECTRONIC COMPONENT, THIN FILM CAPACITOR AND ELECTRONIC CIRCUIT BOARD
誘電体薄膜、電子部品、薄膜キャパシタ及び電子回路基板
TAKAHASHI KAZUKO (author) / OTSUKI SHIRO (author)
2020-10-01
Patent
Electronic Resource
Japanese
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