A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
CERAMIC STRUCTURE FOR MANUFACTURING APPARATUS OF SEMICONDUCTOR, AND MANUFACTURING METHOD THEREOF
To provide a ceramic structure capable of achieving upsizing of a whole apparatus even when a ceramic sintered body such as Y2O3 of low strength is used in a large-scale manufacturing apparatus of a semiconductor, and to provide a manufacturing method thereof.SOLUTION: A manufacturing method of a ceramic structure includes the step for: preparing a tabular first substrate 11 made of an alumina sintered body, an aluminum nitride sintered body, or silicon carbide sintered body and a tabular second substrate 12 made of a yttria sintered body or a complex oxide sintered body containing yttrium and aluminum, and having a thickness less than the first substrate 11; forming a base layer and a metal film on the joint face of the first substrate 11 and on the joint face of the second substrate 12; and joining the first substrate 11 and the second substrate 12 with the metal films in-between by applying a pressure of 1 MPa or more and 25 MPa or less to two metal films in an overlapped state.SELECTED DRAWING: Figure 1
【課題】半導体製造装置の大型化に伴いＹ2Ｏ3などの強度の低いセラミックス焼結体が用いられても全体の大型化を図ることができるセラミックス構造体およびその製造方法を提供する。【解決手段】アルミナ焼結体、窒化アルミニウム焼結体、または炭化珪素焼結体からなる板状の第１基材１１と、イットリア焼結体またはイットリウムおよびアルミニウムを含む複合酸化物焼結体からなり、第１基材１１より厚みが小さい板状の第２基材１２と、を準備する工程と、第１基材１１の接合面上および第２基材１２の接合面上に下地層及び金属膜を形成する工程と、金属膜と金属膜とを重ね合わせた状態で１ＭＰａ以上２５ＭＰａ以下の圧力で加圧することにより、金属膜を介して第１基材１１と第２基材１２と接合する工程と、を備えている。【選択図】図１
CERAMIC STRUCTURE FOR MANUFACTURING APPARATUS OF SEMICONDUCTOR, AND MANUFACTURING METHOD THEREOF
To provide a ceramic structure capable of achieving upsizing of a whole apparatus even when a ceramic sintered body such as Y2O3 of low strength is used in a large-scale manufacturing apparatus of a semiconductor, and to provide a manufacturing method thereof.SOLUTION: A manufacturing method of a ceramic structure includes the step for: preparing a tabular first substrate 11 made of an alumina sintered body, an aluminum nitride sintered body, or silicon carbide sintered body and a tabular second substrate 12 made of a yttria sintered body or a complex oxide sintered body containing yttrium and aluminum, and having a thickness less than the first substrate 11; forming a base layer and a metal film on the joint face of the first substrate 11 and on the joint face of the second substrate 12; and joining the first substrate 11 and the second substrate 12 with the metal films in-between by applying a pressure of 1 MPa or more and 25 MPa or less to two metal films in an overlapped state.SELECTED DRAWING: Figure 1
【課題】半導体製造装置の大型化に伴いＹ2Ｏ3などの強度の低いセラミックス焼結体が用いられても全体の大型化を図ることができるセラミックス構造体およびその製造方法を提供する。【解決手段】アルミナ焼結体、窒化アルミニウム焼結体、または炭化珪素焼結体からなる板状の第１基材１１と、イットリア焼結体またはイットリウムおよびアルミニウムを含む複合酸化物焼結体からなり、第１基材１１より厚みが小さい板状の第２基材１２と、を準備する工程と、第１基材１１の接合面上および第２基材１２の接合面上に下地層及び金属膜を形成する工程と、金属膜と金属膜とを重ね合わせた状態で１ＭＰａ以上２５ＭＰａ以下の圧力で加圧することにより、金属膜を介して第１基材１１と第２基材１２と接合する工程と、を備えている。【選択図】図１
CERAMIC STRUCTURE FOR MANUFACTURING APPARATUS OF SEMICONDUCTOR, AND MANUFACTURING METHOD THEREOF
半導体製造装置用セラミックス構造体およびその製造方法
TSUTAI YOSHIFUMI (author) / ICHIKAWA YOSHITAKA (author) / SHIMAZU TAKEHITO (author) / UOMOTO SACHI (author)
2021-02-22
Patent
Electronic Resource
Japanese
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