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PRODUCTION METHOD OF SILICON NITRIDE SINTERED COMPACT
To produce a silicon nitride sintered compact in which deterioration of shape accuracy and generation of cracks are suppressed.SOLUTION: A production method of a silicon nitride sintered compact includes the steps of: preparing a molding material containing a raw material powder containing 50 wt.% or more of metal silicon powder and an organic binder; forming the molding material by injection molding or extrusion molding to obtain a molded product; degreasing the molded product; nitriding the metal silicon contained in the molded product after the degreasing to obtain a nitride product; and sintering the nitride product.SELECTED DRAWING: None
【課題】形状精度の悪化及びワレの発生を抑制した窒化ケイ素焼結体を製造する。【解決手段】窒化ケイ素焼結体の製造方法は、50重量%以上の金属シリコン粉末を含む原料粉末と、有機バインダと、を含む成形用材料を準備する工程と、成形用材料を射出成形又は押出成形によって成形して成形体を得る工程と、成形体を脱脂する工程と、脱脂する工程後の成形体に含まれる金属シリコンを窒化することにより窒化体を得る工程と、窒化体を焼結する工程と、を含む。【選択図】なし
PRODUCTION METHOD OF SILICON NITRIDE SINTERED COMPACT
To produce a silicon nitride sintered compact in which deterioration of shape accuracy and generation of cracks are suppressed.SOLUTION: A production method of a silicon nitride sintered compact includes the steps of: preparing a molding material containing a raw material powder containing 50 wt.% or more of metal silicon powder and an organic binder; forming the molding material by injection molding or extrusion molding to obtain a molded product; degreasing the molded product; nitriding the metal silicon contained in the molded product after the degreasing to obtain a nitride product; and sintering the nitride product.SELECTED DRAWING: None
【課題】形状精度の悪化及びワレの発生を抑制した窒化ケイ素焼結体を製造する。【解決手段】窒化ケイ素焼結体の製造方法は、50重量%以上の金属シリコン粉末を含む原料粉末と、有機バインダと、を含む成形用材料を準備する工程と、成形用材料を射出成形又は押出成形によって成形して成形体を得る工程と、成形体を脱脂する工程と、脱脂する工程後の成形体に含まれる金属シリコンを窒化することにより窒化体を得る工程と、窒化体を焼結する工程と、を含む。【選択図】なし
PRODUCTION METHOD OF SILICON NITRIDE SINTERED COMPACT
窒化ケイ素焼結体の製造方法
NAKAMURA FUMIYA (author) / HAYAKAWA YASUTAKE (author)
2022-03-30
Patent
Electronic Resource
Japanese
IPC:
C04B
Kalk
,
LIME
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