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A platform for research: civil engineering, architecture and urbanism
SILICON NITRIDE SINTERED COMPACT
To provide a silicon nitride sintered compact for which a high breakdown voltage is required when it is formed to a thickness of about 100 μm, and to reduce warpage of the silicon nitride sintered compact.SOLUTION: A silicon nitride sintered compact has a planar projected area ratio of voids of 1.0% or less and a breakdown voltage of 5 kV or more when an AC voltage is applied to a plate-shaped silicon nitride sintered compact having a thickness of 100 μm in at least one area of 64 μm×48 μm of a polished surface of a silicon nitride sintered compact whose surface has been polished 50 μm or over.SELECTED DRAWING: Figure 2
【課題】厚さ１００μｍほどに形成したときに高い絶縁破壊電圧が要求される窒化ケイ素焼結体の用途に対応し、また、窒化ケイ素焼結体の反りを小さくする。【解決手段】窒化ケイ素焼結体の表面を５０μｍ以上研磨した研磨面の任意の少なくとも一つの６４μｍ×４８μｍのエリアにおいて、ボイドの平面投影面積率が１．０％以下であり、厚さ１００μｍの板状の窒化ケイ素焼結体に交流電圧を印加したときの絶縁破壊電圧が５ｋＶ以上である窒化ケイ素焼結体である。【選択図】図２
SILICON NITRIDE SINTERED COMPACT
To provide a silicon nitride sintered compact for which a high breakdown voltage is required when it is formed to a thickness of about 100 μm, and to reduce warpage of the silicon nitride sintered compact.SOLUTION: A silicon nitride sintered compact has a planar projected area ratio of voids of 1.0% or less and a breakdown voltage of 5 kV or more when an AC voltage is applied to a plate-shaped silicon nitride sintered compact having a thickness of 100 μm in at least one area of 64 μm×48 μm of a polished surface of a silicon nitride sintered compact whose surface has been polished 50 μm or over.SELECTED DRAWING: Figure 2
【課題】厚さ１００μｍほどに形成したときに高い絶縁破壊電圧が要求される窒化ケイ素焼結体の用途に対応し、また、窒化ケイ素焼結体の反りを小さくする。【解決手段】窒化ケイ素焼結体の表面を５０μｍ以上研磨した研磨面の任意の少なくとも一つの６４μｍ×４８μｍのエリアにおいて、ボイドの平面投影面積率が１．０％以下であり、厚さ１００μｍの板状の窒化ケイ素焼結体に交流電圧を印加したときの絶縁破壊電圧が５ｋＶ以上である窒化ケイ素焼結体である。【選択図】図２
SILICON NITRIDE SINTERED COMPACT
窒化ケイ素焼結体
MATSUMOTO OSAMU (author) / TAKAHASHI MITSUTAKA (author)
2023-11-10
Patent
Electronic Resource
Japanese
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