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SINTERED SILICON NITRIDE
To reduce voids in sintered silicon nitride and reduce the warpage of the sintered silicon nitride by reducing volumetric shrinkage during cooling after sintering.SOLUTION: A sintered silicon nitride comprises silicon nitride, and a grain boundary phase formed from a sintering aid. The grain boundary phase has an amorphous structure. Preferably, the grain boundary phase contains at least MgO or MgSiN2 and contains no SrO. In an X-ray diffraction pattern determined with an X-ray diffraction device including a semiconductor detector, the highest integrated intensity out of peaks of crystalline compounds in grain boundary phases present in the range with a diffraction angle 2θ of 28° to 32° is 5% or less relative to the integrated intensity of the silicon nitride (101) plane.SELECTED DRAWING: Figure 1
【課題】焼結後の冷却時の体積収縮を小さくして、窒化ケイ素焼結体中のボイドを少なくし、窒化ケイ素焼結体の反りを小さくする。【解決手段】窒化ケイ素と、焼結助剤で形成される粒界相とからなる窒化ケイ素焼結体であって、前記粒界相がアモルファス構造である。前記粒界相は、少なくともＭｇＯ又はＭｇＳｉＮ2を含有し、ＳｒＯを含有しないことが好ましい。半導体検出器を備えたＸ線回折装置を使用して得られたＸ線回折パターンにおいて回折角２θが２８°～３２°の範囲に存在する粒界相における結晶化合物のピークのうち、最も大きい積分強度が、窒化ケイ素（１０１）面の積分強度に対して５％以下である。【選択図】図１
SINTERED SILICON NITRIDE
To reduce voids in sintered silicon nitride and reduce the warpage of the sintered silicon nitride by reducing volumetric shrinkage during cooling after sintering.SOLUTION: A sintered silicon nitride comprises silicon nitride, and a grain boundary phase formed from a sintering aid. The grain boundary phase has an amorphous structure. Preferably, the grain boundary phase contains at least MgO or MgSiN2 and contains no SrO. In an X-ray diffraction pattern determined with an X-ray diffraction device including a semiconductor detector, the highest integrated intensity out of peaks of crystalline compounds in grain boundary phases present in the range with a diffraction angle 2θ of 28° to 32° is 5% or less relative to the integrated intensity of the silicon nitride (101) plane.SELECTED DRAWING: Figure 1
【課題】焼結後の冷却時の体積収縮を小さくして、窒化ケイ素焼結体中のボイドを少なくし、窒化ケイ素焼結体の反りを小さくする。【解決手段】窒化ケイ素と、焼結助剤で形成される粒界相とからなる窒化ケイ素焼結体であって、前記粒界相がアモルファス構造である。前記粒界相は、少なくともＭｇＯ又はＭｇＳｉＮ2を含有し、ＳｒＯを含有しないことが好ましい。半導体検出器を備えたＸ線回折装置を使用して得られたＸ線回折パターンにおいて回折角２θが２８°～３２°の範囲に存在する粒界相における結晶化合物のピークのうち、最も大きい積分強度が、窒化ケイ素（１０１）面の積分強度に対して５％以下である。【選択図】図１
SINTERED SILICON NITRIDE
窒化ケイ素焼結体
MATSUMOTO OSAMU (author) / TAKAHASHI MITSUTAKA (author)
2022-11-02
Patent
Electronic Resource
Japanese
Sintered silicon nitride and method for producing sintered silicon nitride
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