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ScAlN LAMINATE AND MANUFACTURING METHOD THEREOF
To provide an ScAlN laminate with improved piezoelectric performance.SOLUTION: An ScAlN laminate according to an embodiment of the present invention has the improved piezoelectric performance, and includes a substrate, an underlayer formed on the substrate, and an ScAlN thin film formed on the underlayer, and the closest interatomic distance, which is the distance between the closest atoms in the lattice plane parallel to the surface of the underlayer, is shorter than the a-axis length of the ScAlN thin film.SELECTED DRAWING: Figure 1
【課題】圧電性能をより向上させたScAlN積層体を提供する。【解決手段】上記課題を解決するために、本発明のある観点によれば、基板と、基板上に形成された下地層と、下地層上に形成されたScAlN薄膜と、を備え、下地層の表面と平行な格子面における最も近接する原子間の距離である最近接原子間距離がScAlN薄膜のa軸長よりも短いことを特徴とする、ScAlN積層体が提供される。本発明の上記観点によれば、圧電性能をより向上させたScAlN積層体を提供することができる。【選択図】図1
ScAlN LAMINATE AND MANUFACTURING METHOD THEREOF
To provide an ScAlN laminate with improved piezoelectric performance.SOLUTION: An ScAlN laminate according to an embodiment of the present invention has the improved piezoelectric performance, and includes a substrate, an underlayer formed on the substrate, and an ScAlN thin film formed on the underlayer, and the closest interatomic distance, which is the distance between the closest atoms in the lattice plane parallel to the surface of the underlayer, is shorter than the a-axis length of the ScAlN thin film.SELECTED DRAWING: Figure 1
【課題】圧電性能をより向上させたScAlN積層体を提供する。【解決手段】上記課題を解決するために、本発明のある観点によれば、基板と、基板上に形成された下地層と、下地層上に形成されたScAlN薄膜と、を備え、下地層の表面と平行な格子面における最も近接する原子間の距離である最近接原子間距離がScAlN薄膜のa軸長よりも短いことを特徴とする、ScAlN積層体が提供される。本発明の上記観点によれば、圧電性能をより向上させたScAlN積層体を提供することができる。【選択図】図1
ScAlN LAMINATE AND MANUFACTURING METHOD THEREOF
ScAlN積層体及びその製造方法
YAMADA HIROSHI (author) / HIRATA KENJI (author) / UEHARA MASAHITO (author) / ANGGRAINI SRI AYU (author) / AKIYAMA MORIHITO (author)
2022-12-02
Patent
Electronic Resource
Japanese
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