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STRUCTURE, SUBSTRATE, HEAT DISSIPATION SUBSTRATE, BONDED BODY AND POWER MODULE
To provide a structure, a substrate, a heat dissipation substrate, a joined body, and a power module that have both high thermal conductivity and high strength.SOLUTION: According to an embodiment, a structure of the present invention has a grain and a grain boundary, the grain contains a β-type silicon nitride phase, the unit cell volume of the grain is between 145.45 Å3 and 145.60 Å3, and the average grin size of the grain is between 3.5 μm and 10 μm.SELECTED DRAWING: Figure 1
【課題】高熱伝導率と高強度を両立した構造体、基板、放熱基板、接合体及びパワーモジュールを提供する。【解決手段】実施形態によれば、結晶粒と、粒界とを有し、結晶粒はβ型窒化珪素相を含み、結晶粒の単位格子体積が145.45Å3以上145.60Å3以下であり、かつ、結晶粒の平均粒径が3.5μm以上10μm以下である構造体である。【選択図】 図1
STRUCTURE, SUBSTRATE, HEAT DISSIPATION SUBSTRATE, BONDED BODY AND POWER MODULE
To provide a structure, a substrate, a heat dissipation substrate, a joined body, and a power module that have both high thermal conductivity and high strength.SOLUTION: According to an embodiment, a structure of the present invention has a grain and a grain boundary, the grain contains a β-type silicon nitride phase, the unit cell volume of the grain is between 145.45 Å3 and 145.60 Å3, and the average grin size of the grain is between 3.5 μm and 10 μm.SELECTED DRAWING: Figure 1
【課題】高熱伝導率と高強度を両立した構造体、基板、放熱基板、接合体及びパワーモジュールを提供する。【解決手段】実施形態によれば、結晶粒と、粒界とを有し、結晶粒はβ型窒化珪素相を含み、結晶粒の単位格子体積が145.45Å3以上145.60Å3以下であり、かつ、結晶粒の平均粒径が3.5μm以上10μm以下である構造体である。【選択図】 図1
STRUCTURE, SUBSTRATE, HEAT DISSIPATION SUBSTRATE, BONDED BODY AND POWER MODULE
構造体、基板、放熱基板、接合体及びパワーモジュール
FUKUDA YUMI (author)
2023-09-29
Patent
Electronic Resource
Japanese
IPC:
B32B
LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
,
Schichtkörper, d.h. aus Ebenen oder gewölbten Schichten, z.B. mit zell- oder wabenförmiger Form, aufgebaute Erzeugnisse
/
C04B
Kalk
,
LIME
/
H05K
PRINTED CIRCUITS
,
Gedruckte Schaltungen
European Patent Office | 2022
|European Patent Office | 2021
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