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WAFER SUPPORT
To provide a new wafer support which has excellent corrosion resistance.SOLUTION: Provided is a wafer support 30 which comprises: a base material 14 made of machinable ceramic including boron nitride; a first layer for covering a surface of the base material; and conductive members 18, 20 in which at least a part is included in the base material. The first layer is composed of a ceramic sintered compact essentially consisting of aluminum nitride, and the ratio of the boron nitride included in the base material 14 is higher than that included in the first layer.SELECTED DRAWING: Figure 4
【課題】耐食性に優れた新たなウエハ支持体を提供する。【解決手段】ウエハ支持体30は、窒化ホウ素を含むマシナブルセラミックスからなる基材14と、基材の表面を覆う第1の層と、基材に少なくとも一部が内包された導電部材18,20と、を備える。第1の層は、窒化アルミニウムを主成分とするセラミックス焼結体で構成されており、基材14に含まれる窒化ホウ素の割合は、第1の層に含まれる窒化ホウ素の割合よりも高い。【選択図】図4
WAFER SUPPORT
To provide a new wafer support which has excellent corrosion resistance.SOLUTION: Provided is a wafer support 30 which comprises: a base material 14 made of machinable ceramic including boron nitride; a first layer for covering a surface of the base material; and conductive members 18, 20 in which at least a part is included in the base material. The first layer is composed of a ceramic sintered compact essentially consisting of aluminum nitride, and the ratio of the boron nitride included in the base material 14 is higher than that included in the first layer.SELECTED DRAWING: Figure 4
【課題】耐食性に優れた新たなウエハ支持体を提供する。【解決手段】ウエハ支持体30は、窒化ホウ素を含むマシナブルセラミックスからなる基材14と、基材の表面を覆う第1の層と、基材に少なくとも一部が内包された導電部材18,20と、を備える。第1の層は、窒化アルミニウムを主成分とするセラミックス焼結体で構成されており、基材14に含まれる窒化ホウ素の割合は、第1の層に含まれる窒化ホウ素の割合よりも高い。【選択図】図4
WAFER SUPPORT
ウエハ支持体
YAMAGISHI KO (author) / MORI KAZUMASA (author) / KONO HITOSHI (author) / ETO SHUNICHI (author) / SHIBASE ATSUSHI (author)
2024-08-16
Patent
Electronic Resource
Japanese