A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
METAL/NITRIDE LAMINATED BODY AND INSULATED CIRCUIT SUBSTRATE
To provide a metal/nitride laminate body in which a metal solidification layer formed by solidifying a molten metal and an active metal nitride, such as Zr-N and Ti-N, are firmly bonded together.SOLUTION: The present invention relates to a metal/nitride laminate body 20 in which a metal solidification layer 21 and an active metal nitride layer 22 consisting of one or two of Ti-N and Zr-N are bonded together. A modified nitride layer 25 is formed between the active metal nitride layer 22 and the metal solidification layer 21, the modified nitride layer having a composition in which a portion of the active metal of the active metal nitride layer 22 is replaced by one or two of Al and Si.SELECTED DRAWING: Figure 2
【課題】溶融金属が凝固した金属凝固層と、Ｚｒ－ＮやＴｉ－Ｎといった活性金属窒化物と、が強固に接合された金属／窒化物積層体を提供する。【解決手段】金属凝固層２１とＴｉ－ＮおよびＺｒ－Ｎのいずれか一種または二種からなる活性金属窒化物層２２とが接合された金属／窒化物積層体２０であって、活性金属窒化物層２２と金属凝固層２１との間に、活性金属窒化物層２２の活性金属の一部がＡｌおよびＳｉのいずれか一種または二種で置換された組成である改質窒化物層２５が形成されていることを特徴とする。【選択図】図２
METAL/NITRIDE LAMINATED BODY AND INSULATED CIRCUIT SUBSTRATE
To provide a metal/nitride laminate body in which a metal solidification layer formed by solidifying a molten metal and an active metal nitride, such as Zr-N and Ti-N, are firmly bonded together.SOLUTION: The present invention relates to a metal/nitride laminate body 20 in which a metal solidification layer 21 and an active metal nitride layer 22 consisting of one or two of Ti-N and Zr-N are bonded together. A modified nitride layer 25 is formed between the active metal nitride layer 22 and the metal solidification layer 21, the modified nitride layer having a composition in which a portion of the active metal of the active metal nitride layer 22 is replaced by one or two of Al and Si.SELECTED DRAWING: Figure 2
【課題】溶融金属が凝固した金属凝固層と、Ｚｒ－ＮやＴｉ－Ｎといった活性金属窒化物と、が強固に接合された金属／窒化物積層体を提供する。【解決手段】金属凝固層２１とＴｉ－ＮおよびＺｒ－Ｎのいずれか一種または二種からなる活性金属窒化物層２２とが接合された金属／窒化物積層体２０であって、活性金属窒化物層２２と金属凝固層２１との間に、活性金属窒化物層２２の活性金属の一部がＡｌおよびＳｉのいずれか一種または二種で置換された組成である改質窒化物層２５が形成されていることを特徴とする。【選択図】図２
METAL/NITRIDE LAMINATED BODY AND INSULATED CIRCUIT SUBSTRATE
金属／窒化物積層体、および、絶縁回路基板
TERASAKI NOBUYUKI (author)
2024-08-20
Patent
Electronic Resource
Japanese
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