A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
TANTALUM CARBIDE COATING MATERIAL AND COMPOUND SEMICONDUCTOR GROWTH DEVICE
To provide a tantalum carbide coating material capable of suppressing the peeling of a tantalum carbide coating film in hot corrosive environments, and a compound semiconductor growth device that uses the tantalum carbide coating material.SOLUTION: The present invention relates to a tantalum carbide coating material 1 including a base material 12 and a tantalum carbide coating film 11 that coats at least a part of the base material 12, wherein the number of intersections of cracks present on the surface of the tantalum carbide coating film 11 per unit area is 25/cm2 or less. A compound semiconductor growth device according to the present invention uses the tantalum carbide coating material according to the present invention.SELECTED DRAWING: Figure 1
【課題】高温腐食環境下における炭化タンタル被覆膜の剥離を抑制できる炭化タンタル被覆材料及びその炭化タンタル被覆材料を使用した化合物半導体成長装置を提供する。【解決手段】本発明は、基材１２と、基材１２の少なくとも一部を被覆する炭化タンタル被覆膜１１とを含む炭化タンタル被覆材料１であって、炭化タンタル被覆膜１１の表面に存在するクラックの交点の単位面積あたりの数が２５個／ｃｍ２以下である。本発明の化合物半導体成長装置は、本発明の炭化タンタル被覆材料を使用する。【選択図】図１
TANTALUM CARBIDE COATING MATERIAL AND COMPOUND SEMICONDUCTOR GROWTH DEVICE
To provide a tantalum carbide coating material capable of suppressing the peeling of a tantalum carbide coating film in hot corrosive environments, and a compound semiconductor growth device that uses the tantalum carbide coating material.SOLUTION: The present invention relates to a tantalum carbide coating material 1 including a base material 12 and a tantalum carbide coating film 11 that coats at least a part of the base material 12, wherein the number of intersections of cracks present on the surface of the tantalum carbide coating film 11 per unit area is 25/cm2 or less. A compound semiconductor growth device according to the present invention uses the tantalum carbide coating material according to the present invention.SELECTED DRAWING: Figure 1
【課題】高温腐食環境下における炭化タンタル被覆膜の剥離を抑制できる炭化タンタル被覆材料及びその炭化タンタル被覆材料を使用した化合物半導体成長装置を提供する。【解決手段】本発明は、基材１２と、基材１２の少なくとも一部を被覆する炭化タンタル被覆膜１１とを含む炭化タンタル被覆材料１であって、炭化タンタル被覆膜１１の表面に存在するクラックの交点の単位面積あたりの数が２５個／ｃｍ２以下である。本発明の化合物半導体成長装置は、本発明の炭化タンタル被覆材料を使用する。【選択図】図１
TANTALUM CARBIDE COATING MATERIAL AND COMPOUND SEMICONDUCTOR GROWTH DEVICE
炭化タンタル被覆材料及び化合物半導体成長装置
MIYAJIMA NAOYA (author) / HIRATE AKIHIRO (author) / YAMAMURA KAZUICHI (author)
2024-10-11
Patent
Electronic Resource
Japanese
TANTALUM CARBIDE COATING MATERIAL AND COMPOUND SEMICONDUCTOR GROWTH DEVICE
| European Patent Office | 2024
Tantalum carbide coating for semiconductor growth and preparation method thereof
| European Patent Office | 2024