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In2O3−SnO2−ZnO系スパッタリングターゲット
A sputtering target including indium (In), tin (Sn) and zinc (Zn) and an oxide including one or more elements X selected from the following group X, the atomic ratio of the elements satisfying the following formulas (1) to (4): Group X: Mg, Si, Al, Sc, Ti, Y, Zr, Hf, Ta, La, Nd, Sm 0.10≰In/(In+Sn+Zn)≰0.85 (1) 0.01≰Sn/(In+Sn+Zn)≰0.40 (2) 0.10≰Zn/(In+Sn+Zn)≰0.70 (3) 0.70≰In/(In+X)≰0.99 (4).
In2O3−SnO2−ZnO系スパッタリングターゲット
A sputtering target including indium (In), tin (Sn) and zinc (Zn) and an oxide including one or more elements X selected from the following group X, the atomic ratio of the elements satisfying the following formulas (1) to (4): Group X: Mg, Si, Al, Sc, Ti, Y, Zr, Hf, Ta, La, Nd, Sm 0.10≰In/(In+Sn+Zn)≰0.85 (1) 0.01≰Sn/(In+Sn+Zn)≰0.40 (2) 0.10≰Zn/(In+Sn+Zn)≰0.70 (3) 0.70≰In/(In+X)≰0.99 (4).
In2O3−SnO2−ZnO系スパッタリングターゲット
2016-10-12
Patent
Electronic Resource
Japanese