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スパッタリングターゲット
To provide a sputtering target to which direct-current sputtering is allowed, and which can control a thin film composition after sputtering to a desired composition.SOLUTION: A sputtering target includes Mg, Ti, O and N based on the compositions as 0<50 at%, 0
スパッタリングターゲット
To provide a sputtering target to which direct-current sputtering is allowed, and which can control a thin film composition after sputtering to a desired composition.SOLUTION: A sputtering target includes Mg, Ti, O and N based on the compositions as 0<50 at%, 0
スパッタリングターゲット
2022-04-19
Patent
Electronic Resource
Japanese