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IGZOスパッタリングターゲット
To provide IGZO sputtering target capable of suppressing an influence on a sputtering condition or on obtained IGZO membrane characteristic, according to a target life when using the sputtering target.SOLUTION: In IGZO sputtering target, which is a sputtering target having an oxide sintered body comprising indium (In), gallium (Ga), zinc (Zn), oxygen (O) and inevitable impurities, the minimum value Rmin(mΩ-cm) and the maximum value Rmax(mΩ-cm) of a bulk resistance in the thickness direction of the oxide sintered body satisfy Rmin≥50 mΩ-cm, Rmax≤200 mΩ-cm, Rmax/Rmin≤1.3.SELECTED DRAWING: None
IGZOスパッタリングターゲット
To provide IGZO sputtering target capable of suppressing an influence on a sputtering condition or on obtained IGZO membrane characteristic, according to a target life when using the sputtering target.SOLUTION: In IGZO sputtering target, which is a sputtering target having an oxide sintered body comprising indium (In), gallium (Ga), zinc (Zn), oxygen (O) and inevitable impurities, the minimum value Rmin(mΩ-cm) and the maximum value Rmax(mΩ-cm) of a bulk resistance in the thickness direction of the oxide sintered body satisfy Rmin≥50 mΩ-cm, Rmax≤200 mΩ-cm, Rmax/Rmin≤1.3.SELECTED DRAWING: None