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    CRYSTAL STRUCTURE COMPOUND OXIDE SINTERED BODY SPUTTERING TARGET CRYSTALLINE OXIDE THIN FILM AMORPHOUS OXIDE THIN FILM THIN FILM TRANSISTOR AND ELECTRONIC EQUIPMENT

    하기 조성식 (2) 로 나타내고, 하기 (A) ∼ (K) 에 규정하는 X 선 (Cu-Kα 선) 회절 측정에 의해 관측되는 입사각 (2θ) 의 범위에서 회절 피크를 갖는 결정 구조 화합물 A. (InxGayAlz)2O3····(2) (식 (2) 중, 0.47 ≤ x ≤ 0.53, 0.17 ≤ y ≤ 0.43, 0.07 ≤ z ≤ 0.33, x ＋ y ＋ z = 1 이다.) 31°∼ 34°···(A), 36°∼ 39°···(B), 30°∼ 32°···(C), 51°∼ 53°···(D), 53°∼ 56°···(E), 62°∼ 66°···(F), 9°∼ 11°···(G), 19°∼ 21°···(H), 42°∼ 45°···(I), 8°∼ 10°···(J), 17°∼ 19°···(K)

    A crystalline structure compound A is represented by a composition formula (2) and has having diffraction peaks respectively in below-defined ranges (A) to (K) of an incidence angle observed by X-ray diffraction measurement.(InxGayAlz)2O3  (2)In the formula (2), 0.47≤x≤0.53, 0.17≤y≤0.43, 0.07≤z≤0.33, and x+y+z=1.31° to 34° (A), 36° to 39° (B), 30° to 32° (C), 51° to 53° (D), 53° to 56° (E), 62° to 66° (F), 9° to 11° (G), 19° to 21° (H), 42° to 45° (I), 8° to 10° (J), and 17° to 19° (K).

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    CRYSTAL STRUCTURE COMPOUND OXIDE SINTERED BODY SPUTTERING TARGET CRYSTALLINE OXIDE THIN FILM AMORPHOUS OXIDE THIN FILM THIN FILM TRANSISTOR AND ELECTRONIC EQUIPMENT

    하기 조성식 (2) 로 나타내고, 하기 (A) ∼ (K) 에 규정하는 X 선 (Cu-Kα 선) 회절 측정에 의해 관측되는 입사각 (2θ) 의 범위에서 회절 피크를 갖는 결정 구조 화합물 A. (InxGayAlz)2O3····(2) (식 (2) 중, 0.47 ≤ x ≤ 0.53, 0.17 ≤ y ≤ 0.43, 0.07 ≤ z ≤ 0.33, x ＋ y ＋ z = 1 이다.) 31°∼ 34°···(A), 36°∼ 39°···(B), 30°∼ 32°···(C), 51°∼ 53°···(D), 53°∼ 56°···(E), 62°∼ 66°···(F), 9°∼ 11°···(G), 19°∼ 21°···(H), 42°∼ 45°···(I), 8°∼ 10°···(J), 17°∼ 19°···(K)

    A crystalline structure compound A is represented by a composition formula (2) and has having diffraction peaks respectively in below-defined ranges (A) to (K) of an incidence angle observed by X-ray diffraction measurement.(InxGayAlz)2O3  (2)In the formula (2), 0.47≤x≤0.53, 0.17≤y≤0.43, 0.07≤z≤0.33, and x+y+z=1.31° to 34° (A), 36° to 39° (B), 30° to 32° (C), 51° to 53° (D), 53° to 56° (E), 62° to 66° (F), 9° to 11° (G), 19° to 21° (H), 42° to 45° (I), 8° to 10° (J), and 17° to 19° (K).

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    CRYSTAL STRUCTURE COMPOUND OXIDE SINTERED BODY SPUTTERING TARGET CRYSTALLINE OXIDE THIN FILM AMORPHOUS OXIDE THIN FILM THIN FILM TRANSISTOR AND ELECTRONIC EQUIPMENT

    하기 조성식 (2) 로 나타내고, 하기 (A) ∼ (K) 에 규정하는 X 선 (Cu-Kα 선) 회절 측정에 의해 관측되는 입사각 (2θ) 의 범위에서 회절 피크를 갖는 결정 구조 화합물 A. (InxGayAlz)2O3····(2) (식 (2) 중, 0.47 ≤ x ≤ 0.53, 0.17 ≤ y ≤ 0.43, 0.07 ≤ z ≤ 0.33, x ＋ y ＋ z = 1 이다.) 31°∼ 34°···(A), 36°∼ 39°···(B), 30°∼ 32°···(C), 51°∼ 53°···(D), 53°∼ 56°···(E), 62°∼ 66°···(F), 9°∼ 11°···(G), 19°∼ 21°···(H), 42°∼ 45°···(I), 8°∼ 10°···(J), 17°∼ 19°···(K)

    A crystalline structure compound A is represented by a composition formula (2) and has having diffraction peaks respectively in below-defined ranges (A) to (K) of an incidence angle observed by X-ray diffraction measurement.(InxGayAlz)2O3  (2)In the formula (2), 0.47≤x≤0.53, 0.17≤y≤0.43, 0.07≤z≤0.33, and x+y+z=1.31° to 34° (A), 36° to 39° (B), 30° to 32° (C), 51° to 53° (D), 53° to 56° (E), 62° to 66° (F), 9° to 11° (G), 19° to 21° (H), 42° to 45° (I), 8° to 10° (J), and 17° to 19° (K).

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    Title:

    CRYSTAL STRUCTURE COMPOUND OXIDE SINTERED BODY SPUTTERING TARGET CRYSTALLINE OXIDE THIN FILM AMORPHOUS OXIDE THIN FILM THIN FILM TRANSISTOR AND ELECTRONIC EQUIPMENT

    Additional title:

    결정 구조 화합물, 산화물 소결체, 스퍼터링 타깃, 결정질 산화물 박막, 아모르퍼스 산화물 박막, 박막 트랜지스터, 및 전자 기기

    Publication date:

    2023-11-06

    Type of media:

    Patent

    Type of material:

    Electronic Resource

    Language:

    Korean

    Classification:

    IPC:  C01G Verbindungen der von den Unterklassen C01D oder C01F nicht umfassten Metalle , COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F / C04B Kalk , LIME / C23C Beschichten metallischer Werkstoffe , COATING METALLIC MATERIAL / H01L Halbleiterbauelemente , SEMICONDUCTOR DEVICES

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