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DENSE COMPOSITE MATERIAL METHOD FOR PRODUCING THE SAME JOINED BODY AND MEMBER FOR SEMICONDUCTOR MANUFACTURING DEVICE
A dense composite material of the present invention comprises 43 to 63 mass% of titanium silicide, and comprises silicon carbide and titanium carbide in smaller amounts than the mass% of the titanium silicide, respectively, wherein a maximum value of distances between silicon carbide particles is 40 ㎛ or less, a standard deviation thereof is 10 or less, and open porosity thereof is 1% or less. The dense composite material has a very small difference in the coefficient of linear thermal expansion with alumina, and sufficiently high thermal conductivity, density, strength, and sintering properties.
본 발명의 치밀질 복합 재료는, 규화티탄을 43~63 질량% 함유하고, 탄화규소 및 탄화티탄을 각각 규화티탄의 질량%보다 소량 함유하며, 탄화규소의 입자간 거리의 최대치가 40 ㎛ 이하이고 표준편차가 10 이하이며, 개기공률이 1% 이하인 것이다.
DENSE COMPOSITE MATERIAL METHOD FOR PRODUCING THE SAME JOINED BODY AND MEMBER FOR SEMICONDUCTOR MANUFACTURING DEVICE
A dense composite material of the present invention comprises 43 to 63 mass% of titanium silicide, and comprises silicon carbide and titanium carbide in smaller amounts than the mass% of the titanium silicide, respectively, wherein a maximum value of distances between silicon carbide particles is 40 ㎛ or less, a standard deviation thereof is 10 or less, and open porosity thereof is 1% or less. The dense composite material has a very small difference in the coefficient of linear thermal expansion with alumina, and sufficiently high thermal conductivity, density, strength, and sintering properties.
본 발명의 치밀질 복합 재료는, 규화티탄을 43~63 질량% 함유하고, 탄화규소 및 탄화티탄을 각각 규화티탄의 질량%보다 소량 함유하며, 탄화규소의 입자간 거리의 최대치가 40 ㎛ 이하이고 표준편차가 10 이하이며, 개기공률이 1% 이하인 것이다.
DENSE COMPOSITE MATERIAL METHOD FOR PRODUCING THE SAME JOINED BODY AND MEMBER FOR SEMICONDUCTOR MANUFACTURING DEVICE
치밀질 복합 재료, 그 제법, 접합체 및 반도체 제조 장치용 부재
NAGAI ASUMI (author) / NISHIMURA NOBORU (author) / YAMAGUCHI HIROFUMI (author)
2021-08-09
Patent
Electronic Resource
Korean
IPC:
C04B
Kalk
,
LIME
/
B21D
WORKING OR PROCESSING OF SHEET METAL OR METAL TUBES, RODS OR PROFILES WITHOUT ESSENTIALLY REMOVING MATERIAL
,
Bearbeiten oder Verarbeiten von Blechen, Metallrohren, -stangen oder -profilen ohne wesentliches Abtragen des Werkstoffs
/
H01L
Halbleiterbauelemente
,
SEMICONDUCTOR DEVICES
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