A platform for research: civil engineering, architecture and urbanism
OXIDE SPUTTERING TARGET, THIN FILM TRANSISTOR USING THE SAME
According to an embodiment of the present invention, a sputtering target includes at least one among In, Zn, Sn, and Ga, and 0.005-1 mol% of W.
OXIDE SPUTTERING TARGET, THIN FILM TRANSISTOR USING THE SAME
According to an embodiment of the present invention, a sputtering target includes at least one among In, Zn, Sn, and Ga, and 0.005-1 mol% of W.
OXIDE SPUTTERING TARGET, THIN FILM TRANSISTOR USING THE SAME
KISHIMOTO KATSUSHI (author) / TANAKA YOSHINORI (author) / MOON YEON KEON (author) / SOHN SANG WOO (author) / SHIN SANG WON (author) / FUKASAWA TAKAYUKI (author)
2015-09-17
Patent
Electronic Resource
Korean
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