OXIDE SPUTTERING TARGET, THIN FILM TRANSISTOR USING THE SAME: Fid-Bau Portal

OXIDE SPUTTERING TARGET, THIN FILM TRANSISTOR USING THE SAME

KISHIMOTO KATSUSHI / TANAKA YOSHINORI / MOON YEON KEON / SOHN SANG WOO / SHIN SANG WON / FUKASAWA TAKAYUKI

According to an embodiment of the present invention, a sputtering target includes at least one among In, Zn, Sn, and Ga, and 0.005-1 mol% of W.

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OXIDE SPUTTERING TARGET, THIN FILM TRANSISTOR USING THE SAME

KISHIMOTO KATSUSHI / TANAKA YOSHINORI / MOON YEON KEON / SOHN SANG WOO / SHIN SANG WON / FUKASAWA TAKAYUKI

Abstract

According to an embodiment of the present invention, a sputtering target includes at least one among In, Zn, Sn, and Ga, and 0.005-1 mol% of W.

OXIDE SPUTTERING TARGET, THIN FILM TRANSISTOR USING THE SAME

KISHIMOTO KATSUSHI / TANAKA YOSHINORI / MOON YEON KEON / SOHN SANG WOO / SHIN SANG WON / FUKASAWA TAKAYUKI

Abstract

According to an embodiment of the present invention, a sputtering target includes at least one among In, Zn, Sn, and Ga, and 0.005-1 mol% of W.

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Titel:

OXIDE SPUTTERING TARGET, THIN FILM TRANSISTOR USING THE SAME

Beteiligte:

KISHIMOTO KATSUSHI (Autor:in) / TANAKA YOSHINORI (Autor:in) / MOON YEON KEON (Autor:in) / SOHN SANG WOO (Autor:in) / SHIN SANG WON (Autor:in) / FUKASAWA TAKAYUKI (Autor:in)

Erscheinungsdatum:

17.09.2015

Medientyp:

Patent

Format:

Elektronische Ressource

Sprache:

Koreanisch

Klassifikation:

IPC: C23C Beschichten metallischer Werkstoffe , COATING METALLIC MATERIAL / C04B Kalk , LIME / H01L Halbleiterbauelemente , SEMICONDUCTOR DEVICES

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