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A platform for research: civil engineering, architecture and urbanism
OXIDE SINTERED COMPACT AND METHOD OF PRODUCING SAME, OXIDE SPUTTERING TARGET, AND CONDUCTIVE OXIDE FILM
Provided is an oxide sintered body composed of indium (In), titanium (Ti), zinc (Zn), tin (Sn) and oxygen (O). More particularly, the oxide sintered body of the present invention has: an atomic number ratio of In to Ti satisfying an equation of 3.0 <= In/Ti <= 5.0; the atomic number ratio of Zn and Sn to In and Ti satisfying an equation of 0.2 <= (Zn+Sn)/(In+Ti) <= 1.5; and the atomic number ratio of Zn to Sn satisfying an equation of 0.5 <= Zn/Sn <= 7.0. The oxide sintered body of the present invention has low volume resistivity and is capable of DC sputtering. A transparent conductive film with high refractive index can be formed using the oxide sintered body of the present invention.
인듐 (In), 티탄 (Ti), 아연 (Zn), 주석 (Sn) 및 산소 (O) 로 이루어지고, Ti 에 대한 In 의 함유량이 원자수 비로 3.0 ≤ In/Ti ≤ 5.0, In 과 Ti 에 대한 Zn 과 Sn 의 함유량이 원자수 비로 0.2 ≤ (Zn ＋ Sn)/(In ＋ Ti) ≤ 1.5, Sn 에 대한 Zn 의 함유량이 원자수 비로 0.5 ≤ Zn/Sn ≤ 7.0 의 관계식을 만족하는 것을 특징으로 하는 산화물 소결체. 체적 저항률이 낮고, DC 스퍼터링이 가능하며, 투명하고 고굴절률의 도전막을 형성할 수 있다.
OXIDE SINTERED COMPACT AND METHOD OF PRODUCING SAME, OXIDE SPUTTERING TARGET, AND CONDUCTIVE OXIDE FILM
Provided is an oxide sintered body composed of indium (In), titanium (Ti), zinc (Zn), tin (Sn) and oxygen (O). More particularly, the oxide sintered body of the present invention has: an atomic number ratio of In to Ti satisfying an equation of 3.0 <= In/Ti <= 5.0; the atomic number ratio of Zn and Sn to In and Ti satisfying an equation of 0.2 <= (Zn+Sn)/(In+Ti) <= 1.5; and the atomic number ratio of Zn to Sn satisfying an equation of 0.5 <= Zn/Sn <= 7.0. The oxide sintered body of the present invention has low volume resistivity and is capable of DC sputtering. A transparent conductive film with high refractive index can be formed using the oxide sintered body of the present invention.
인듐 (In), 티탄 (Ti), 아연 (Zn), 주석 (Sn) 및 산소 (O) 로 이루어지고, Ti 에 대한 In 의 함유량이 원자수 비로 3.0 ≤ In/Ti ≤ 5.0, In 과 Ti 에 대한 Zn 과 Sn 의 함유량이 원자수 비로 0.2 ≤ (Zn ＋ Sn)/(In ＋ Ti) ≤ 1.5, Sn 에 대한 Zn 의 함유량이 원자수 비로 0.5 ≤ Zn/Sn ≤ 7.0 의 관계식을 만족하는 것을 특징으로 하는 산화물 소결체. 체적 저항률이 낮고, DC 스퍼터링이 가능하며, 투명하고 고굴절률의 도전막을 형성할 수 있다.
OXIDE SINTERED COMPACT AND METHOD OF PRODUCING SAME, OXIDE SPUTTERING TARGET, AND CONDUCTIVE OXIDE FILM
산화물 소결체 및 그 제조 방법, 산화물 스퍼터링 타깃 그리고 도전성 산화물 박막
NARA ATSUSHI (author)
2016-04-15
Patent
Electronic Resource
Korean
IPC:
C04B
Kalk
,
LIME
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