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METHOD FOR MANUFACTURING THE REACTION BONDING SILICON NITRIDE
The present invention relates to a method of rapidly producing silicon nitride by using an ytterbium (Yb)-based additive in the production of a reaction-bonded silicon nitride through nitridation from a silicon (Si) raw material powder. More specifically, the method of rapidly producing reaction-bonded silicon nitride comprises the steps of: uniformly mixing the Si raw material powder with the Yb-based additive to prepare a mixed raw material; forming the mixed raw material into a formed body; and putting the formed body into a furnace, and then heating the formed body at a predetermined rate under a controlled atmosphere, thereby performing nitridation at a predetermined reaction temperature. According to the present invention, the method can produce the reaction-bonded silicon nitride by enabling the Yb-based additive to react with a silicon dioxide film and a silicon nitride film which interfere with a contact between the surface of the Si raw material powder and nitrogen, and exposing the surface of the Si raw material powder to nitrogen, thereby enabling a reaction between the Si raw material and nitrogen to be smoothly performed.
본 발명은 실리콘(Si) 원료분말으로부터 질화반응을 통해 반응결합 질화규소를 제조하는데 이터븀(Yb)계 첨가제를 이용하여, 질화규소를 급속하게 제조하는 방법에 관한 것으로, 보다 상세하게는 실리콘(Si) 원료분말과 이터븀(Yb)계 첨가제를 균일하게 혼합하여 혼합원료를 단계, 상기 혼합원료를 성형체로 성형하는 단계, 및 상기 성형체를 로(furnace)에 넣은 후, 제어된 분위기 하에서 일정 속도로 승온하여 일정 반응온도로 질화반응을 수행하는 단계를 포함하는 반응결합 질화규소의 급속 제조방법을 제공한다. 본 발명에 따르면, 이터븀(Yb)계 첨가제가 실리콘(Si) 원료분말 표면과 질소의 접촉을 방해하는 이산화실리콘 막 및 질화규소 막과 반응하며 실리콘(Si) 원료 표면을 질소에 노출시켜 줌으로써 실리콘(Si) 원료와 질소의 반응을 원활하게 일어나도록 하여 급속한 반응결합 질화규소를 제조할 수 있다.
METHOD FOR MANUFACTURING THE REACTION BONDING SILICON NITRIDE
The present invention relates to a method of rapidly producing silicon nitride by using an ytterbium (Yb)-based additive in the production of a reaction-bonded silicon nitride through nitridation from a silicon (Si) raw material powder. More specifically, the method of rapidly producing reaction-bonded silicon nitride comprises the steps of: uniformly mixing the Si raw material powder with the Yb-based additive to prepare a mixed raw material; forming the mixed raw material into a formed body; and putting the formed body into a furnace, and then heating the formed body at a predetermined rate under a controlled atmosphere, thereby performing nitridation at a predetermined reaction temperature. According to the present invention, the method can produce the reaction-bonded silicon nitride by enabling the Yb-based additive to react with a silicon dioxide film and a silicon nitride film which interfere with a contact between the surface of the Si raw material powder and nitrogen, and exposing the surface of the Si raw material powder to nitrogen, thereby enabling a reaction between the Si raw material and nitrogen to be smoothly performed.
본 발명은 실리콘(Si) 원료분말으로부터 질화반응을 통해 반응결합 질화규소를 제조하는데 이터븀(Yb)계 첨가제를 이용하여, 질화규소를 급속하게 제조하는 방법에 관한 것으로, 보다 상세하게는 실리콘(Si) 원료분말과 이터븀(Yb)계 첨가제를 균일하게 혼합하여 혼합원료를 단계, 상기 혼합원료를 성형체로 성형하는 단계, 및 상기 성형체를 로(furnace)에 넣은 후, 제어된 분위기 하에서 일정 속도로 승온하여 일정 반응온도로 질화반응을 수행하는 단계를 포함하는 반응결합 질화규소의 급속 제조방법을 제공한다. 본 발명에 따르면, 이터븀(Yb)계 첨가제가 실리콘(Si) 원료분말 표면과 질소의 접촉을 방해하는 이산화실리콘 막 및 질화규소 막과 반응하며 실리콘(Si) 원료 표면을 질소에 노출시켜 줌으로써 실리콘(Si) 원료와 질소의 반응을 원활하게 일어나도록 하여 급속한 반응결합 질화규소를 제조할 수 있다.
METHOD FOR MANUFACTURING THE REACTION BONDING SILICON NITRIDE
반응결합 질화규소의 제조방법
LEE SEUNG JUN (author) / BAEK SEUNG SU (author) / PARK JIN WOO (author) / KIM HAI DOO (author) / KO JAE WOONG (author) / PARK YOUNG JO (author) / KIM HA NEUL (author) / KIM JIN MYUNG (author)
2018-07-17
Patent
Electronic Resource
Korean
IPC:
C01B
NON-METALLIC ELEMENTS
,
Nichtmetallische Elemente
/
C04B
Kalk
,
LIME
/
F27D
Einzelheiten oder Zubehör für Industrieöfen, Schachtöfen, Brennöfen oder Retorten, soweit sie nicht auf eine Ofenart eingeschränkt sind
,
DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
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