A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
비정질 산화물 반도체막, 산화물 소결체, 및 박막 트랜지스터
InO결정 및 하기 (A) ∼ (F) 에 규정하는 X 선 (Cu-Kα 선) 회절 측정에 의해 관측되는 입사각 (2θ) 의 범위에서 회절 피크를 갖는 결정 A 를 포함하는 산화물 소결체. 31.0°∼ 34.0°···(A) 36.0°∼ 39.0°···(B) 50.0°∼ 54.0°···(C) 53.0°∼ 57.0°···(D) 9.0°∼ 11.0° ···(E) 19.0°∼ 21.0°···(F)
A sintered oxide includes an In2O3 crystal, and a crystal A whose diffraction peak is in an incidence angle (2θ) range defined by (A) to (F) below as measured by X-ray (Cu-K α ray) diffraction measurement: 31.0 to 34.0 degrees . . . (A); 36.0 to 39.0 degrees . . . (B); 50.0 to 54.0 degrees . . . (C); 53.0 to 57.0 degrees . . . (D); 9.0 to 11.0 degrees . . . (E); and 19.0 to 21.0 degrees . . . (F).
비정질 산화물 반도체막, 산화물 소결체, 및 박막 트랜지스터
InO결정 및 하기 (A) ∼ (F) 에 규정하는 X 선 (Cu-Kα 선) 회절 측정에 의해 관측되는 입사각 (2θ) 의 범위에서 회절 피크를 갖는 결정 A 를 포함하는 산화물 소결체. 31.0°∼ 34.0°···(A) 36.0°∼ 39.0°···(B) 50.0°∼ 54.0°···(C) 53.0°∼ 57.0°···(D) 9.0°∼ 11.0° ···(E) 19.0°∼ 21.0°···(F)
A sintered oxide includes an In2O3 crystal, and a crystal A whose diffraction peak is in an incidence angle (2θ) range defined by (A) to (F) below as measured by X-ray (Cu-K α ray) diffraction measurement: 31.0 to 34.0 degrees . . . (A); 36.0 to 39.0 degrees . . . (B); 50.0 to 54.0 degrees . . . (C); 53.0 to 57.0 degrees . . . (D); 9.0 to 11.0 degrees . . . (E); and 19.0 to 21.0 degrees . . . (F).
비정질 산화물 반도체막, 산화물 소결체, 및 박막 트랜지스터
INOUE KAZUYOSHI (author) / SHIBATA MASATOSHI (author)
2019-10-10
Patent
Electronic Resource
Korean