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COMPOSITION OF PIEZOELECTRIC MATERIAL METHOD FOR FABRICATING THE SAME PIEZOELECTRIC DEVICE AND APPARATUS COMPRISING PIEZOELECTRIC DEVICE
According to one embodiment of the present application, a piezoelectric device includes: a piezoelectric device layer including a first material and a second material surrounded by a first material layer; a first electrode portion disposed at a first surface of the piezoelectric device layer; and a second electrode portion disposed at a second surface of the piezoelectric device layer opposite to the first surface, wherein the piezoelectric device layer satisfies a composition represented by chemical formula 1: 0.96(Na_aK_1-a)(Nb_b(T_1-b))O_3-(0.04-x)MZrO_3 ?? x(Bi_cAg_1-c)ZrO_3 (T=Sb, Ta), (M= Sr, Ba, Ca) + d mol% NaNbO_3, wherein a is 0.4 <= a <= 0.6, b is 0.90 <= b <= 0.98, c is 0.4 <= c <= 0.6, d is 0 <= d <= 5.0, and x is 0 <= x <= 0.04. According to the present invention, a piezoelectric material composition that does not contain lead and has high-voltage electrical properties is provided.
본 명세서의 실시예에 따른 압전 소자는 제 1 물질 및 제 1 물질층에 의해 둘러싸인 제 2 물질을 포함하는 압전 소자층, 및 압전 소자층의 제 1 면에 배치된 제 1 전극부, 및 제 1면에 대향하는 제 2 면에 배치된 제 2 전극부를 포함하고, 압전 소자층은 0.96(NaaK1-a)(Nbb(T1-b))O3 - (0.04-x)MZrO3 ?? x(BicAg1-c)ZrO3 (T=Sb, Ta), (M= Sr, Ba, Ca) + d mol% NaNbO3 (상기, a는 0.4 ≤ a ≤ 0.6이고, b는 0.90 ≤ b ≤ 0.98이고, c는 0.4 ≤ c ≤ 0.6이고, d는 0 ≤ d ≤ 5.0이고, x는 0 ≤ x ≤ 0.04)의 조성을 만족한다.
COMPOSITION OF PIEZOELECTRIC MATERIAL METHOD FOR FABRICATING THE SAME PIEZOELECTRIC DEVICE AND APPARATUS COMPRISING PIEZOELECTRIC DEVICE
According to one embodiment of the present application, a piezoelectric device includes: a piezoelectric device layer including a first material and a second material surrounded by a first material layer; a first electrode portion disposed at a first surface of the piezoelectric device layer; and a second electrode portion disposed at a second surface of the piezoelectric device layer opposite to the first surface, wherein the piezoelectric device layer satisfies a composition represented by chemical formula 1: 0.96(Na_aK_1-a)(Nb_b(T_1-b))O_3-(0.04-x)MZrO_3 ?? x(Bi_cAg_1-c)ZrO_3 (T=Sb, Ta), (M= Sr, Ba, Ca) + d mol% NaNbO_3, wherein a is 0.4 <= a <= 0.6, b is 0.90 <= b <= 0.98, c is 0.4 <= c <= 0.6, d is 0 <= d <= 5.0, and x is 0 <= x <= 0.04. According to the present invention, a piezoelectric material composition that does not contain lead and has high-voltage electrical properties is provided.
본 명세서의 실시예에 따른 압전 소자는 제 1 물질 및 제 1 물질층에 의해 둘러싸인 제 2 물질을 포함하는 압전 소자층, 및 압전 소자층의 제 1 면에 배치된 제 1 전극부, 및 제 1면에 대향하는 제 2 면에 배치된 제 2 전극부를 포함하고, 압전 소자층은 0.96(NaaK1-a)(Nbb(T1-b))O3 - (0.04-x)MZrO3 ?? x(BicAg1-c)ZrO3 (T=Sb, Ta), (M= Sr, Ba, Ca) + d mol% NaNbO3 (상기, a는 0.4 ≤ a ≤ 0.6이고, b는 0.90 ≤ b ≤ 0.98이고, c는 0.4 ≤ c ≤ 0.6이고, d는 0 ≤ d ≤ 5.0이고, x는 0 ≤ x ≤ 0.04)의 조성을 만족한다.
COMPOSITION OF PIEZOELECTRIC MATERIAL METHOD FOR FABRICATING THE SAME PIEZOELECTRIC DEVICE AND APPARATUS COMPRISING PIEZOELECTRIC DEVICE
압전 재료 조성물, 이를 제조하는 방법, 압전 소자, 및 압전 소자를 포함하는 장치
YONGWOO LEE (author) / SEUNGRYULL PARK (author) / YONG SU HAM (author) / YUSEON KHO (author) / SEUNGHYUN SUNG (author) / NAHM SAHN (author) / DAE SU KIM (author) / SHIN HOSUNG (author) / JAE MIN EUM (author) / SU HWAN GO (author)
2023-07-11
Patent
Electronic Resource
Korean
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