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    PIEZOELECTRIC MATERIAL COMPOSITION, METHOD OF MANUFACTURING THE SAME, PIEZOELECTRIC DEVICE, AND APPARATUS INCLUDING THE PIEZOELECTRIC DEVICE

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    New search for: PARK SEUNGRYULL
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    A piezoelectric material composition, a method of manufacturing the same, a piezoelectric device, and apparatus including the piezoelectric device. The piezoelectric device may include a piezoelectric device layer including a first material and a second material surrounded by the first material, a first electrode portion disposed at a first surface of the piezoelectric device layer, and a second electrode portion disposed at a second surface of the piezoelectric device layer opposite to the first surface, wherein the piezoelectric device layer comprises a piezoelectric material composition represented by Chemical Formula 1: 0.96(NaaK1-a)(Nbb(T1-b))O3-(0.04-x)MZrO3-x(BicAg1-c)ZrO3+d mol % NaNbO3, wherein T is Sb or Ta, M is Sr, Ba or Ca, a is 0.4≤a≤0.6, b is 0.90≤b≤0.98, c is 0.4≤c≤0.6, d is 0≤d≤5.0, and x is 0≤x≤0.04 and wherein T is Sb or Ta and M is Sr, Ba, or Ca.

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    PIEZOELECTRIC MATERIAL COMPOSITION, METHOD OF MANUFACTURING THE SAME, PIEZOELECTRIC DEVICE, AND APPARATUS INCLUDING THE PIEZOELECTRIC DEVICE

    New search for: LEE YONGWOO
    New search for: PARK SEUNGRYULL
    New search for: HAM YONG-SU
    New search for: KHO YUSEON
    New search for: SUNG SEUNGHYUN
    New search for: NAHM SAHN
    New search for: KIM DAE-SU
    New search for: SHIN HOSUNG
    New search for: EUM JAE MIN
    New search for: GO SU-HWAN

    A piezoelectric material composition, a method of manufacturing the same, a piezoelectric device, and apparatus including the piezoelectric device. The piezoelectric device may include a piezoelectric device layer including a first material and a second material surrounded by the first material, a first electrode portion disposed at a first surface of the piezoelectric device layer, and a second electrode portion disposed at a second surface of the piezoelectric device layer opposite to the first surface, wherein the piezoelectric device layer comprises a piezoelectric material composition represented by Chemical Formula 1: 0.96(NaaK1-a)(Nbb(T1-b))O3-(0.04-x)MZrO3-x(BicAg1-c)ZrO3+d mol % NaNbO3, wherein T is Sb or Ta, M is Sr, Ba or Ca, a is 0.4≤a≤0.6, b is 0.90≤b≤0.98, c is 0.4≤c≤0.6, d is 0≤d≤5.0, and x is 0≤x≤0.04 and wherein T is Sb or Ta and M is Sr, Ba, or Ca.

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    PIEZOELECTRIC MATERIAL COMPOSITION, METHOD OF MANUFACTURING THE SAME, PIEZOELECTRIC DEVICE, AND APPARATUS INCLUDING THE PIEZOELECTRIC DEVICE

    New search for: LEE YONGWOO
    New search for: PARK SEUNGRYULL
    New search for: HAM YONG-SU
    New search for: KHO YUSEON
    New search for: SUNG SEUNGHYUN
    New search for: NAHM SAHN
    New search for: KIM DAE-SU
    New search for: SHIN HOSUNG
    New search for: EUM JAE MIN
    New search for: GO SU-HWAN

    A piezoelectric material composition, a method of manufacturing the same, a piezoelectric device, and apparatus including the piezoelectric device. The piezoelectric device may include a piezoelectric device layer including a first material and a second material surrounded by the first material, a first electrode portion disposed at a first surface of the piezoelectric device layer, and a second electrode portion disposed at a second surface of the piezoelectric device layer opposite to the first surface, wherein the piezoelectric device layer comprises a piezoelectric material composition represented by Chemical Formula 1: 0.96(NaaK1-a)(Nbb(T1-b))O3-(0.04-x)MZrO3-x(BicAg1-c)ZrO3+d mol % NaNbO3, wherein T is Sb or Ta, M is Sr, Ba or Ca, a is 0.4≤a≤0.6, b is 0.90≤b≤0.98, c is 0.4≤c≤0.6, d is 0≤d≤5.0, and x is 0≤x≤0.04 and wherein T is Sb or Ta and M is Sr, Ba, or Ca.

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    Title:

    PIEZOELECTRIC MATERIAL COMPOSITION, METHOD OF MANUFACTURING THE SAME, PIEZOELECTRIC DEVICE, AND APPARATUS INCLUDING THE PIEZOELECTRIC DEVICE

    Contributors:

    LEE YONGWOO (author) / PARK SEUNGRYULL (author) / HAM YONG-SU (author) / KHO YUSEON (author) / SUNG SEUNGHYUN (author) / NAHM SAHN (author) / KIM DAE-SU (author) / SHIN HOSUNG (author) / EUM JAE MIN (author) / GO SU-HWAN (author)

    Publication date:

    2023-07-06

    Type of media:

    Patent

    Type of material:

    Electronic Resource

    Language:

    English

    Classification:

    IPC:  H04R LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS , Lautsprecher, Mikrofone, Schallplatten-Tonabnehmer oder ähnliche akustische, elektromechanische Wandler / C04B Kalk , LIME / H10N

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